1.3-μm InAs/GaAs quantum dots grown on Si substrates

被引：0

作者：

邵福会 ^{[1
,2
]}

张一 ^{[1
,2
]}

苏向斌 ^{[1
,2
]}

谢圣文 ^{[1
,2
]}

尚金铭 ^{[1
,2
]}

赵云昊 ^{[3
]}

蔡晨元 ^{[3
]}

车仁超 ^{[3
]}

徐应强 ^{[1
,2
]}

倪海桥 ^{[1
,2
]}

牛智川 ^{[1
,2
]}

机构：

[1] State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences

[2] College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences

[3] Laboratory of Advanced Materials, Department of Materials Science, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM),Fudan University

来源：

Chinese Physics B | 2018年 / 12期

基金：

中国国家自然科学基金;

关键词：

quantum dots; dislocation filter; molecular beam epitaxy(MBE); silicon photonics;

D O I：

暂无

中图分类号：

O471.1 [半导体量子理论];

学科分类号：

摘要：

We compare the effect of InGaAs/GaAs strained-layer superlattice（SLS） with that of GaAs thick buffer layer（TBL）serving as a dislocation filter layer. The InGaAs/GaAs SLS is found to be more effective than GaAs TBL in blocking the propagation of threading dislocations, which are generated at the interface between the GaAs buffer layer and the Si substrate. Through testing and analysis, we conclude that the weaker photoluminescence for quantum dots（QDs） on Si substrate is caused by the quality of capping In;Ga;As and upper GaAs. We also find that the periodic misfits at the interface are related to the initial stress release of GaAs islands, which guarantees that the upper layers are stress-free.

引用

页码：530 / 535

页数：6

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