Resistive Switching Properties and Failure Behaviors of(Pt, Cu)/Amorphous ZrO2/Pt Sandwich Structures

被引：0

作者：

Haifa Zhai ^{[1
,2
]}

Jizhou Kong ^{[2
,3
]}

Jien Yang ^{[1
]}

Jing Xu ^{[1
]}

Qingran Xu ^{[1
]}

Hongchen Sun ^{[1
]}

Aidong Li ^{[2
]}

Di Wu ^{[2
]}

机构：

[1] Henan Province Key Laboratory of Photovoltaic Materials, College of Physics and Electronic Engineering, Henan Normal University

[2] National Laboratory of Solid State Microstructures, Department of Materials Science and Engineering, College of Engineering and Applied Sciences,Nanjing University

[3] State Key Laboratory of Mechanics and Control of Mechanical Structures, Nanjing University of Aeronautics and Astronautics

来源：

JournalofMaterialsScience&Technology | 2016年 / 32卷 / 07期

基金：

中国国家自然科学基金;

关键词：

ZrO2; Thin films; Sol-gel method; Failure;

D O I：

暂无

中图分类号：

TP333 [存贮器];

学科分类号：

摘要：

The effect of Pt and Cu electrodes on the resistive switching properties and failure behaviors of amorphous ZrO2?lms were investigated. Compared with Cu/ZrO2/Pt structures, the Pt/ZrO2/Pt structures exhibit better resistive switching properties such as the higher resistance ratio of OFF/ON states, the longer switching cycles and narrow distribution of OFF state resistance(Roff). The switching mechanism in the Pt/ZrO2/Pt structure can be attributed to the formation and rupture of oxygen vacancy ?laments; while in the Cu/Zr O2/Pt structure, there exist both oxygen vacancy ?laments and Cu ?laments. The formation of Cu?laments is related to the redox reaction of Cu electrode under the applied voltage. The inhomogeneous dispersive injection of Cu ions results in the dispersive Roff and signi?cant decrease of operate voltage.Schematic diagrams of the formation of conductive ?laments and the failure mechanism in the Cu/ZrO2/Pt structures are also proposed.

引用

页码：676 / 680

页数：5

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