Probing the limit of quantum dot photovoltaic devices by adjusting interface through in situ TEM technology

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作者：
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来源：
Science Foundation in China | 2019年 / 04期
关键词：
Probing the limit of quantum dot photovoltaic devices by adjusting interface through in situ TEM technology; TEM;
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暂无
中图分类号：
TB383.1 []; TN36 [半导体光电器件];
学科分类号：
070205 ; 0803 ; 080501 ; 1406 ;
摘要：
With the support by the National Natural Science Foundation of China,the research team led by Prof. Sun Li Tao(孙立涛) at the SEU-FEI Nano-Pico Center,Key Laboratory of MEMS of Ministry of Education,Collaborative Innovation Center for Micro/Nano Fabrication, Device and System, Southeast University, Nanjing, China,published the latest results in Nature Nanotechnology (2019,14:950—956).
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页码：24 / 24
页数：1
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