Silicon-on-insulator Structure Fabricated by Epitaxial Layer Transfer

被引：0
|
作者：
XIE Xin yun
机构：
来源：
Semiconductor Photonics and Technology | 2002年 / 03期
关键词：
SOI; Porous silicon; Silicon epitaxy; Wafer bonding;
D O I：
暂无
中图分类号：
TN304 [材料];
学科分类号：
0805 ; 080501 ; 080502 ; 080903 ;
摘要：
Epitaxial monocrystalline silicon film was grown on the porous silicon using ultra high vacuum electron beam evaporation. Silicon on insulator(SOI) materials were successfully produced by bonding and etching the back of porous silicon. The quality of the SOI samples was investigated by using the cross sectional transmission electron microscopy (XTEM), spreading resistance profile (SRP), atomic force microscopy (AFM) and four crystal X ray diffraction (FCXRD). Experimental results show the SOI sample has good properties. Besides, the factors resulting in lattice strain of this SOI structure and the methods to reduce it are given.
引用
收藏
页码：166 / 169
页数：4
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