Fabrication of silicon-on-insulator-multilayer structure by epitaxial layer transfer

被引：1

作者：

Xie, XY ^{[1
]}

Lin, Q ^{[1
]}

Men, CL ^{[1
]}

Liu, WL ^{[1
]}

Xu, AH ^{[1
]}

Lin, CL ^{[1
]}

机构：

[1] Chinese Acad Sci, State Key Lab Funct Mat & Informat, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China

来源：

ACTA PHYSICA SINICA | 2003年 / 52卷 / 01期

关键词：

SiO2 and Si3N4 films; SOIM; epitaxial layer transfer;

D O I：

10.7498/aps.52.207

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Due to the very low thermal conductivity of the thick-buried oxide layer, the silicon-on-insulator( SOI) power devices have an inherent self-heating effect, which limits their operation at high current level. Adopting the new silicon-on-insulator-multilager (SOIM) structures is a good solution to reduce the self-heating effect. In this paper, the SOIM structures were successfully produced by electron beam evaporation of silicon on porous silicon and epitaxial layer transfer. The quality of the structures was investigated by XTEM and SRP. Experimental results show that the buried Si3N4 layer is amorphous and the new SOIM sample has good structural and electical properties.

引用

页码：207 / 210

页数：4

共 8 条

[1] ARNOLD E, 1994, P IEDM, P813
[2] LOW-TEMPERATURE SI3N4 DIRECT BONDING
BOWER, RW
ISMAIL, MS
ROBERDS, BE
[J]. APPLIED PHYSICS LETTERS, 1993, 62 (26) : 3485 - 3487
[3] Improvement in electrical properties of Simni films by multiple-steps implantation
Lu, DT
Huang, D
Ryssel, H
[J]. ACTA PHYSICA SINICA, 2001, 50 (01) : 185 - 188
[4] BONDING OF SILICON-WAFERS FOR SILICON-ON-INSULATOR
MASZARA, WP
GOETZ, G
CAVIGLIA, A
MCKITTERICK, JB
[J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (10) : 4943 - 4950
[5] REESON K, 1997, NUCL INSTRUMENTS MET, V19, P269
[6] BURIED LAYERS OF SILICON OXY-NITRIDE FABRICATED USING ION-BEAM SYNTHESIS
REESON, KJ
HEMMENT, PLF
MEEKISON, CD
MARSH, CD
BOOKER, GR
CHATER, RJ
KILNER, JA
DAVIS, J
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1988, 32 (1-4): : 427 - 432
[7] Reduction of self-heating effect on SOIM devices
Roig, J
Flores, D
Vellvehi, M
Rebollo, J
Millan, J
[J]. MICROELECTRONICS RELIABILITY, 2002, 42 (01) : 61 - 66
[8] EPITAXIAL LAYER TRANSFER BY BOND AND ETCH BACK OF POROUS SI
YONEHARA, T
SAKAGUCHI, K
SATO, N
[J]. APPLIED PHYSICS LETTERS, 1994, 64 (16) : 2108 - 2110

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