Growth of bulk single crystals β-FeSi2 by chemical vapour deposition

被引：0
|
作者：
李延春
孙力玲
曹立民
赵建华
王海燕
南云
高振山
王文魁
机构：
[1] National Microgravity Laboratory,Institute of Mechanics,Chinese Academy of Sciences,Beijing 100080,China
[2] Institute of Materials Science and Engineering,Yanshan University,Qinhuangdao 066004,China
[3] Institute of Physics,Chinese Academy of Sciences,Beijing 100080,China
来源：
Science in China(Series G) | 2003年 / 01期
基金：
中国国家自然科学基金;
关键词：
β-FeSi2 single crystals; α-FeSi2 single crystals; chemical vapor transport;
D O I：
暂无
中图分类号：
O782 [晶体生长工艺];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Bulk single crystals β-FeSi,as a new photoelectric and thermoelectric material,hasbeen successfully grown using chemicalvapor transport technique by using iodine as transportagent in a sealed ampoule.The effects of crystal growth condition on quality and morphologies ofthe single crystals were studied.Both needle-like and grain-like single crystals were gained.Bychanging substrate temperature,tetrahedral high quality α-FeSisingle crystals were also ob-tained.
引用
收藏
页码：47 / 51
页数：5
相关论文
共 50 条
  • [31] Static and dynamic transport study of β-FeSi2 single crystals
    Hara, Y
    Takase, K
    Shimizu, T
    Ohnishi, A
    Sasaki, M
    PHYSICA B-CONDENSED MATTER, 2003, 329 : 1113 - 1114
  • [32] Excitonic transitions in β-FeSi2 epitaxial films and single crystals
    Birdwell, A.G. (gbirdwell@memc.com), 1600, American Institute of Physics Inc. (95):
  • [33] Growth of β-FeSi2 particles on silicon by reactive deposition epitaxy
    Vouroutzis, N.
    Zorba, T. T.
    Dimitriadis, C. A.
    Paraskevopoulos, K. M.
    Dosza, L.
    Molnar, G.
    JOURNAL OF ALLOYS AND COMPOUNDS, 2008, 448 (1-2) : 202 - 205
  • [34] Thermoelectric properties of solution grown β-FeSi2 single crystals
    Suzuki, Hirokazu
    Udono, Haruhiko
    Kikuma, Isao
    MATERIALS TRANSACTIONS, 2006, 47 (06) : 1428 - 1431
  • [35] Single crystal growth of non-stoichiometric β-FeSi2 by chemical transport reaction
    Behr, G
    Ivanenko, L
    Vinzelberg, H
    Heinrich, A
    THIN SOLID FILMS, 2001, 381 (02) : 276 - 281
  • [36] Solution growth of n-type β-FeSi2 single crystals using Sn solvent
    Udono, Haruhiko
    Matsumura, Kazutaka
    Osugi, Isao J.
    Kikuma, Isao
    JOURNAL OF CRYSTAL GROWTH, 2005, 275 (1-2) : E1967 - E1974
  • [37] Growth of GaN metalorganic chemical vapour deposition layers on GaN single crystals
    Pakula, K.
    Baranowski, J.M.
    Stepniewski, R.
    Wysmolek, A.
    Grzegory, I.
    Jun, J.
    Porowski, S.
    Sawicki, M.
    Starowieyski, K.
    Acta Physica Polonica A, 1995, 88 (5 pt 1)
  • [38] Chemical vapour deposition growth of large single crystals of monolayer and bilayer graphene
    Zhou, Hailong
    Yu, Woo Jong
    Liu, Lixin
    Cheng, Rui
    Chen, Yu
    Huang, Xiaoqing
    Liu, Yuan
    Wang, Yang
    Huang, Yu
    Duan, Xiangfeng
    NATURE COMMUNICATIONS, 2013, 4
  • [39] Chemical vapour deposition growth of large single crystals of monolayer and bilayer graphene
    Hailong Zhou
    Woo Jong Yu
    Lixin Liu
    Rui Cheng
    Yu Chen
    Xiaoqing Huang
    Yuan Liu
    Yang Wang
    Yu Huang
    Xiangfeng Duan
    Nature Communications, 4
  • [40] Crystal Structure and Chemical Bonding of β-FeSi2 and ε-FeSi
    Cheng, Jun
    Chen, Xingyu
    Zhou, Jiali
    Zhang, Jiawei
    Qiu, Pengfei
    Shi, Xun
    Chen, Lidong
    JOURNAL OF PHYSICAL CHEMISTRY C, 2024, 128 (33): : 13998 - 14006
12345