AC impedance study on semiconducting properties,of anodic plumbous oxide film

被引：1
|
作者：
PU
机构：
来源：
ChineseJournalofChemistry | 1990年 / 05期
基金：
中国国家自然科学基金;
关键词：
impedance; anodic; Schottky; latter; relaxation; donor; dense; battery; Conway; dissolution;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The semiconducting properties of anodic film formed on Pb in 4.5mol.dmHSOsolu-tion（30℃）at 0.9 V（vs.Hg/HgSO）for 2 h were studied using AC impedance method.The phasecomposition of the film is PbSOand PbO.PbSO.The semiconducting properties are due to the latter.The Mott-Schottky plots show that the said film is an n-type semiconductor with flat-band potentialof-0.9 V（vs.Hg/HgSO）and donor density of 1×10cm.The surface density measured at410—2500 Hz is（2—5）×10cmeV.
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页码：396 / 404
页数：9
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