High holding voltage SCR for robust electrostatic discharge protection

被引：0

作者：

齐钊 ^{[1
]}

乔明 ^{[1
]}

何逸涛 ^{[1
]}

张波 ^{[1
]}

机构：

[1] State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China

来源：

Chinese Physics B | 2017年 / 07期

基金：

中国国家自然科学基金;

关键词：

electrostatic discharge; holding voltage; latch-up-free; failure current;

D O I：

暂无

中图分类号：

TN34 [晶闸管（可控硅）];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ;

摘要：

A novel silicon controlled rectifier（SCR） with high holding voltage（Vh） for electrostatic discharge（ESD） protection is proposed and investigated in this paper. The proposed SCR obtains high Vhby adding a long N+ layer（LN+） and a long P+ layer（LP+）, which divide the conventional low voltage trigger silicon controlled rectifier（LVTSCR） into two SCRs（SCR1: P+/Nwell/Pwell/N+ and SCR2: P+/LN+/LP+/N+） with a shared emitter. Under the low ESD current（IESD）, the two SCRs are turned on at the same time to induce the first snapback with high V;(V;). As the IESDincreases, the SCR2 will be turned off because of its low current gain. Therefore, the IESDwill flow through the longer SCR1 path, bypassing SCR2, which induces the second snapback with high V;(V;). The anti-latch-up ability of the proposed SCR for ESD protection is proved by a dynamic TLP-like（Transmission Line Pulse-like） simulation. An optimized V;of 7.4 V with a maximum failure current(I;) of 14.7 m A/μm is obtained by the simulation.

引用

页码：350 / 355

页数：6

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