Mode-conversion-based silicon photonic modulator loaded by a combination of lateral and interleaved p-n junctions

被引：0

作者：

OMID JAFARI ^{[1
]}

SASAN ZHALEHPOUR ^{[2
]}

WEI SHI ^{[3
]}

SOPHIE LAROCHELLE ^{[3
]}

机构：

[1] Centre d'optique,photonique et laser (COPL),Université Laval

[2] Canada Research Center,Huawei Technologies Canada

[3] Centre d'optique,photonique et laser(COPL) ,Université Laval

来源：

Photonics Research | 2021年 / 9卷 / 04期

基金：

加拿大自然科学与工程研究理事会;

关键词：

D O I：

暂无

中图分类号：

TN761 [调制技术与调制器];

学科分类号：

摘要：

We experimentally demonstrate a silicon photonic modulator that can be loaded with a combination of lateral and interleaved p-n junctions to enhance its phase modulation. We use an asymmetric Bragg grating to introduce mode conversion in the active area, allowing the modulator to operate in reflection without introducing additional on-chip loss. With a compact footprint(phase shifter length of 290 μm), the modulator demonstrates a modulation speed up to 45 Gb/s with a bit error rate below the 7% forward-error-correction(FEC) threshold(up to 55 Gb/s with 20% FEC), and a low power consumption of 226 f J/bit.

引用

页码：471 / 476

页数：6

共 23 条

[1] Mode-conversion-based silicon photonic modulator loaded by a combination of lateral and interleaved p-n junctions
Jafari, Omid
Zhalehpour, Sasan
Shi, Wei
LaRochelle, Sophie
PHOTONICS RESEARCH, 2021, 9 (04) : 471 - 476
[2] Low Driving-Voltage Optical Modulator Based on Carrier Depletion in Silicon with Periodically Interleaved P-N Junctions
Li, Z. Y.
Xu, D. -X.
McKinnon, R.
Janz, S.
Schmid, J. H.
Lapointe, J.
Cheben, P.
Yu, J. Z.
2008 5TH IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS, 2008, : 13 - 15
[3] Photocurrent Generation in a Silicon Waveguide Integrated with Periodically Interleaved P-N Junctions
Zhu, Haike
Zhou, Linjie
Sun, Xiaomeng
Xie, Jingya
Zou, Zhi
Lu, Liangjun
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2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS PACIFIC RIM (CLEO-PR), 2013,
[4] Comparison of Silicon Ring Modulators With Interdigitated and Lateral p-n Junctions
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Yu, Hui
Rakowski, Michal
Christie, Phillip
Verheyen, Peter
Lepage, Guy
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Absil, Philippe
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IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2013, 19 (02)
[5] Performance of silicon micro ring modulator with an interleaved p-n junction for optical interconnects
Goyal, Priyanka
Kaur, Gurjit
INDIAN JOURNAL OF PURE & APPLIED PHYSICS, 2017, 55 (05) : 363 - 367
[6] Conformal P-N junctions in macroporous silicon for photovoltaic energy conversion
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See, Gloria G.
Veeramachaneni, Bharat
Gadeken, Larry L.
Hirschman, Karl D.
Fauchet, Philippe M.
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 7, 2009, 6 (07): : 1754 - +
[7] Field-Induced Nonlinearities in Silicon Waveguides Embedded in Lateral p-n Junctions
Castellan, Claudio
Franchi, Riccardo
Biasi, Stefano
Bernard, Martino
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FRONTIERS IN PHYSICS, 2019, 7 (JULY)
[8] Systematic investigation of coupling-modulated microring resonators based on interleaved p-n junctions
Li, Xianyao
Hu, Yingtao
Xiao, Xi
Xiong, Kang
Li, Zhiyong
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PHOTONICS AND OPTOLECTRONICS MEETINGS (POEM) 2011: OPTOELECTRONIC DEVICES AND INTEGRATION, 2011, 8333
[9] On-Chip Optical Power Monitor Using Periodically Interleaved P-N Junctions Integrated on a Silicon Waveguide
Zhu, Haike
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IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2014, 20 (04)
[10] A Novel Method to Fabricate Silicon Nanowire p-n Junctions by a Combination of Ion Implantation and in-situ Doping
Das Kanungo, Pratyush
Koegler, Reinhard
Werner, Peter
Goesele, Ulrich
Skorupa, Wolfgang
NANOSCALE RESEARCH LETTERS, 2010, 5 (01): : 243 - 246

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