A monolithic distributed phase shifter based on right-handed nonlinear transmission lines at 30 GHz

被引:0
|
作者
黄杰 [1 ,2 ]
赵倩 [3 ]
杨浩 [4 ]
董军荣 [4 ]
张海英 [4 ]
机构
[1] School of Engineering and Technology, Southwest University
[2] State Key Laboratory of Millimeter Waves
[3] School of Physical Science and Technology, Southwest University
[4] Institute of Microelectronics, Chinese Academy of Sciences
关键词
GaAs planar Schottky diode; phase shifter; right-handed nonlinear transmission lines; monolithic microwave integrated circuit;
D O I
暂无
中图分类号
TN623 [移相器、铁氧体移相器];
学科分类号
080903 ;
摘要
The epitaxial material, device structure, and corresponding equivalent large signal circuit model of GaAs planar Schottky varactor diode are successfully developed to design and fabricate a monolithic phase shifter, which is based on right-handed nonlinear transmission lines and consists of a coplanar waveguide transmission line and periodically distributed GaAs planar Schottky varactor diode. The distributed-Schottky transmission-line-type phase shifter at a bias voltage greater than 1.5 V presents a continuous 0°–360°differential phase shift over a frequency range from 0 to 33 GHz. It is demonstrated that the minimum insertion loss is about 0.5 dB and that the return loss is less than 10 dB over the frequency band of 0–33 GHz at a reverse bias voltage less than 4.5 V. These excellent characteristics, such as broad differential phase shift, low insertion loss, and return loss, indicate that the proposed phase shifter can entirely be integrated into a phased array radar circuit.
引用
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页码:455 / 459
页数:5
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