Influence of body contact of SOI MOSFETs on the thermal conductance of devices

被引：0
|
作者：
卢烁今 [1 ]
刘梦新 [1 ]
韩郑生 [1 ]
机构：
[1] Institute of Microelectronics,Chinese Academy of Sciences
来源：
半导体学报 | 2009年 / 30卷 / 09期
关键词：
thermal conductance; body contact; parameter extraction; power dissipation;
D O I：
暂无
中图分类号：
TN386 [场效应器件];
学科分类号：
0805 ; 080501 ; 080502 ; 080903 ;
摘要：
The thermal conductance of devices with different body contacts is studied.A new analytical expression is proposed.This expression can be used in parameter extraction,which gives both good efficiency and high precision.The ratio of thermal conductance of the body contact region to that of the body region is nearly equal to the ratio of the area.The use of an H shape gate body contact is suggested to aid power dissipation in SOI MOSFETs.
引用
收藏
页码：26 / 28
页数：3
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