Two-dimensional electron gas characteristics of InP-based high electron mobility transistor terahertz detector

被引：0

作者：

李金伦 ^{[1
,2
]}

崔少辉 ^{[1
]}

徐建星 ^{[2
,3
]}

崔晓然 ^{[2
,4
]}

郭春妍 ^{[2
,5
]}

马奔 ^{[2
,6
]}

倪海桥 ^{[2
,6
]}

牛智川 ^{[2
,6
]}

机构：

[1] Department of Missile Engineering,Shijiazhuang Campus,Army Engineering University

[2] State Key Laboratory for Superlattices,Institute of Semiconductors,Chinese Academy of Sciences(CAS)

[3] Microsystem & Terahertz Research Center,China Academy of Engineering Physics

[4] Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory,Xidian University

[5] Key Laboratory of Ultra-fast Photoelectric Diagnostics Technology of Chinese Academy of Sciences,Xi'an Institute of Optics and Precision Mechanics

[6] College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences

来源：

Chinese Physics B | 2018年 / 04期

基金：

中国国家自然科学基金;

关键词：

THz detector; high electron mobility transistor; two-dimensional electron gas; InP;

D O I：

暂无

中图分类号：

TN386 [场效应器件];

学科分类号：

摘要：

The samples of In;Ga;As/In;Al;As two-dimensional electron gas（2DEG）are grown by molecular beam epitaxy（MBE）.In the sample preparation process,the In content and spacer layer thickness are changed and two kinds of methods,i.e.,contrast body doping andδ-doping are used.The samples are analyzed by the Hall measurements at 300 Kand 77 K.The In;Ga;As/In;Al;As 2DEG channel structures with mobilities as high as 10289 cm;/V·s（300 K）and42040 cm;/V·s（77 K）are obtained,and the values of carrier concentration（Nc）are 3.465×10;/cm;and 2.502×10;/cm;,respectively.The THz response rates of In P-based high electron mobility transistor（HEMT）structures with different gate lengths at 300 K and 77 K temperatures are calculated based on the shallow water wave instability theory.The results provide a reference for the research and preparation of In P-based HEMT THz detectors.

引用

页码：367 / 372

页数：6

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