Two-dimensional electron gas characteristics of InP-based high electron mobility transistor terahertz detector

The samples of In;Ga;As/In;Al;As two-dimensional electron gas（2DEG）are grown by molecular beam epitaxy（MBE）.In the sample preparation process,the In content and spacer layer thickness are changed and two kinds of methods,i.e.,contrast body doping andδ-doping are used.The samples are analyzed by the Hall measurements at 300 Kand 77 K.The In;Ga;As/In;Al;As 2DEG channel structures with mobilities as high as 10289 cm;/V·s（300 K）and42040 cm;/V·s（77 K）are obtained,and the values of carrier concentration（Nc）are 3.465×10;/cm;and 2.502×10;/cm;,respectively.The THz response rates of In P-based high electron mobility transistor（HEMT）structures with different gate lengths at 300 K and 77 K temperatures are calculated based on the shallow water wave instability theory.The results provide a reference for the research and preparation of In P-based HEMT THz detectors.