Instability of nc-Si: H Films Fabricated by PECVD

被引:0
|
作者
QIANG Wei
机构
关键词
Conductivity; Instability; Nanocrystalline Silicon Film;
D O I
暂无
中图分类号
TN304.055 [];
学科分类号
摘要
1IntroductionThemethodofglowdischargeusinghighlyhydrogen-dilutedsilaneasreactivegas(andinsomecases,anegativebiasonthesubstrat...
引用
收藏
页码:41 / 44
页数:4
相关论文
共 50 条
  • [1] Nanostructural features of nc-Si:H thin films prepared by PECVD
    Shim, JH
    Im, S
    Cho, NH
    APPLIED SURFACE SCIENCE, 2004, 234 (1-4) : 268 - 273
  • [2] Nanostructural, Chemical, and Mechanical Features of nc-Si:H Films Prepared by PECVD
    Son, Jong-Ick
    Nam, Hee-Jong
    Cho, Nam-Hee
    INTERNATIONAL JOURNAL OF PHOTOENERGY, 2012, 2012
  • [3] Structure of nc-Si:H films
    Han, GR
    Zhang, XW
    Shi, GH
    Shen, DK
    Han, WQ
    Du, PY
    PHYSICS AND CHEMISTRY OF NANOSTRUCTURED MATERIALS, 2000, : 56 - 59
  • [4] Nanostructural and PL features of nc-Si:H thin films prepared by PECVD techniques
    Shim, JH
    Cho, NH
    Im, S
    DESIGNING, PROCESSING AND PROPERTIES OF ADVANCED ENGINEERING MATERIALS, PTS 1 AND 2, 2004, 449-4 : 1017 - 1020
  • [5] Influence of Radio Frequency Power on the Structural Properties of nc-Si Films Fabricated by VHF-PECVD
    Guo, Yan Qing
    Wang, Xiang
    Song, Chao
    Huang, Rui
    Song, Jie
    MATERIALS SCIENCE AND NANOTECHNOLOGY I, 2013, 531-532 : 469 - 472
  • [6] Differences Between the nc-Si:H Thin Films Deposited by RF-sputtering and PECVD
    Zhao Zhanxia
    Li Min
    Zhan Yan
    Yu Huacong
    Ma Zhongquan
    Sun Tietun
    2008 2ND IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1-3, 2008, : 330 - +
  • [7] Microstructures of intrinsic nc-Si:H films
    Key Lab. of Materials Physics of Ministry of Education, Zhengzhou University, Zhengzhou 450052, China
    Zhenkong Kexue yu Jishu Xuebao, 2007, 3 (200-202):
  • [8] Analysis on Conductivity of nc-Si: H Films
    QIANG Wei
    Semiconductor Photonics and Technology, 1998, (02) : 84 - 89
  • [9] Effect of substrate temperature on the nanostructural and chemical features of nc-Si:H thin films prepared by PECVD
    Son, Jong-Ick
    Shim, Jae-Hyun
    Cho, Nam-Hee
    CURRENT APPLIED PHYSICS, 2010, 10 (03) : S365 - S368
  • [10] In Situ Plasma Monitoring of PECVD nc-Si:H Films and the Influence of Dilution Ratio on Structural Evolution
    Hsieh, Yu-Lin
    Kau, Li-Han
    Huang, Hung-Jui
    Lee, Chien-Chieh
    Fuh, Yiin-Kuen
    Li, Tomi T.
    COATINGS, 2018, 8 (07):