General formula for phonon-assisted n-photon absorption in solids

被引:0
|
作者
邓洪祥 [1 ]
蒋晓东 [1 ,2 ]
向霞 [1 ]
孙凯 [3 ]
袁晓东 [1 ,2 ]
郑万国 [2 ]
高飞 [4 ]
祖小涛 [1 ]
机构
[1] Department of Applied Physics, University of Electronic Science and Technology of China
[2] Research Center of Laser Fusion, China Academy of Engineering Physics
[3] Department of Materials Engineering and Sciences, University of Michigan, Ann Arbor, MI 48109, USA
[4] Pacific Northwest National Laboratory, P. O. Box 999, Richland, WA 99352, USA
基金
中央高校基本科研业务费专项资金资助; 国家高技术研究发展计划(863计划);
关键词
general formula; phonon-assisted photons absorption; n order perturbation technique; diagram approach; intense laser;
D O I
暂无
中图分类号
O481 [固体理论];
学科分类号
摘要
A general formula for phonon-assisted n-photon absorption in solids is obtained by (n+1)-th order perturbation technique. The complicated calculation process for transition element of n-photon absorption is simply demonstrated by a diagram approach that is proposed in this work. We find that the transition element for the n-photon absorption has a simple form, i.e., it is just the first term of the n-th order fist kind Bessel function.
引用
收藏
页码:577 / 587
页数:11
相关论文
共 50 条
  • [31] Phonon-Assisted Exciton Absorption in CdSe/CdS Colloidal Nanoplatelets
    Smirnov, A. M.
    Golinskaya, A. D.
    Saidzhonov, B. M.
    Vasiliev, R. B.
    Mantsevich, V. N.
    Dneprovskii, V. S.
    JETP LETTERS, 2019, 109 (06) : 372 - 376
  • [32] Phonon-Assisted Exciton Absorption in CdSe/CdS Colloidal Nanoplatelets
    A. M. Smirnov
    A. D. Golinskaya
    B. M. Saidzhonov
    R. B. Vasiliev
    V. N. Mantsevich
    V. S. Dneprovskii
    JETP Letters, 2019, 109 : 372 - 376
  • [33] PHONON-ASSISTED 2-PHOTON TRANSITIONS IN A MAGNETIC-FIELD
    MOUSSA, AR
    HASSAN, AR
    INDIAN JOURNAL OF PURE & APPLIED PHYSICS, 1977, 15 (02) : 68 - 70
  • [34] ON THE SPECTRAL GAP OF THE N-PHOTON ABSORPTION-EMISSION PROCESS
    Hermida, Raul
    Quezada, Roberto
    QUANTUM PROBABILITY AND RELATED TOPICS, 2013, 29 : 143 - 159
  • [35] PHONON-ASSISTED 2-PHOTON EXCITON-TRANSITIONS IN SEMICONDUCTORS
    HASSAN, AR
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1988, 147 (01): : 211 - 214
  • [36] SYMMETRY ADAPTATION TECHNIQUES IN N-PHOTON ABSORPTION-SPECTROSCOPY
    DAOUD, M
    KIBLER, M
    JOURNAL OF ALLOYS AND COMPOUNDS, 1993, 193 (1-2) : 219 - 222
  • [37] Anti-Stokes Photoluminescence from n-type Free-Standing GaN Based on Competing Two-Photon Absorption and Phonon-Assisted Absorption
    Tripathy, Suvranta K.
    Ding, Yujie J.
    2009 CONFERENCE ON LASERS AND ELECTRO-OPTICS AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2009), VOLS 1-5, 2009, : 2391 - 2392
  • [38] Origin of the background absorption in carbon nanotubes: Phonon-assisted excitonic continuum
    Dal Forno, Stefano
    Komatsu, Natsumi
    Wais, Michael
    Mojibpour, Ali
    Wadgaonkar, Indrajit
    Ghosh, Saunab
    Yomogida, Yohei
    Yanagi, Kazuhiro
    Held, Karsten
    Kono, Junichiro
    Battiato, Marco
    CARBON, 2022, 186 : 465 - 474
  • [39] Resonant creation of indirect excitons in diamond at the phonon-assisted absorption edge
    Hazama, Yuji
    Naka, Nobuko
    Kuwata-Gonokami, Makoto
    Tanaka, Koichiro
    EPL, 2013, 104 (04)
  • [40] PHONON SIDEBANDS, MULTIPHONON RELAXATION OF EXCITED STATES, AND PHONON-ASSISTED ENERGY TRANSFER BETWEEN IONS IN SOLIDS
    MIYAKAWA, T
    DEXTER, DL
    PHYSICAL REVIEW B, 1970, 1 (07): : 2961 - &