Polariton lasing in InGaN quantum wells at room temperature

被引：0

作者：

Jinzhao Wu ^{[1
]}

Hao Long ^{[1
]}

Xiaoling Shi ^{[1
]}

Song Luo ^{[2
]}

Zhanghai Chen ^{[2
]}

Zhechuan Feng ^{[3
]}

Leiying Ying ^{[1
]}

Zhiwei Zheng ^{[1
]}

Baoping Zhang ^{[1
]}

机构：

[1] Department of Electronic Engineering,School of Electronic Science and Engineering (National Model Microelectronics College),Xiamen University

[2] Surface Physics Laboratory,Department of Physics,Fudan University

[3] School of Physical Science and Technology,Guangxi University

来源：

Opto-Electronic Advances | 2019年 / 2卷 / 12期

基金：

中国国家自然科学基金;

关键词：

D O I：

暂无

中图分类号：

O431.2 [量子光学];

学科分类号：

摘要：

In this paper,we report the exciton polaritons in both positive and negative detuning micro cavities based on InGaN multi-quantum wells(MQWs) and the first polariton lasing in InGaN/GaN MQWs at room temperature by utilizing a 4.5λ Fabry-Perot(F-P) cavity with double dielectric distributed Bragg reflectors(DBRs).Double thresholds corresponding respectively to polariton lasing and photonic lasing are observed along with half-width narrowing and peak blue-shifts.The threshold of polariton lasing is about half of the threshold of photonic lasing.Our results paved a substantial way for ultra-low threshold lasers and room temperature Bose-Einstein Condensate(BEC) in nitride semiconductors.

引用

页码：20 / 24

页数：5

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