Localized deep levels in AlxGa1-xN epitaxial films with various Al compositions

被引：0

作者：

时俪洋 ^{[1
]}

沈波 ^{[1
]}

闫建昌 ^{[2
]}

王军喜 ^{[2
]}

王平 ^{[1
]}

机构：

[1] State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University

[2] R&D Center for Semiconductor Lighting, Institute of Semiconductors, Chinese Academy of Sciences

来源：

Chinese Physics B | 2014年 / 11期

基金：

中国国家自然科学基金;

关键词：

localized deep levels; current–voltage; capacitance–voltage; high-temperature deep-level transient spectroscopy techniques;

D O I：

暂无

中图分类号：

TQ133.1 [铝的无机化合物];

学科分类号：

0817 ;

摘要：

By using high-temperature deep-level transient spectroscopy(HT-DLTS) and other electrical measurement techniques,localized deep levels in n-type AlxGa1-xN epitaxial films with various Al compositions(x = 0, 0.14, 0.24, 0.33, and 0.43)have been investigated. It is found that there are three distinct deep levels in AlxGa1-xN films, whose level position with respect to the conduction band increases as Al composition increases. The dominant defect level with the activation energy deeper than 1.0 eV below the conduction band closely follows the Fermi level stabilization energy, indicating that its origin may be related to the defect complex, including the anti-site defects and divacancies in AlxGa1-xN films.

引用

页码：426 / 430

页数：5

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