Very low threshold operation of quantum cascade lasers

被引：0

作者：

闫方亮 ^{[1
]}

张锦川 ^{[1
]}

姚丹阳 ^{[1
]}

刘峰奇 ^{[1
]}

王利军 ^{[1
]}

刘峻岐 ^{[1
]}

王占国 ^{[1
]}

机构：

[1] Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices

来源：

Chinese Physics B | 2015年 / 24卷 / 02期

基金：

中国国家自然科学基金; 北京市自然科学基金;

关键词：

semiconductor laser; quantum cascade lasers; threshold current density;

D O I：

暂无

中图分类号：

TN248 [激光器];

学科分类号：

摘要：

A strain-compensated InP-based quantum cascade laser（QCL） structure emitting at 4.6 μm is demonstrated,based on a two-phonon resonant design and grown by solid-source molecular beam epitaxy（MBE）.By optimizing the growth parameters,a very high quality heterostructure with the lowest threshold current densities ever reported for QCLs was fabricated.Threshold current densities as low as 0.47 kA/cm;in pulsed operation and 0.56 kA/cm;in continuous-wave（cw） operation at 293 K were achieved for this state-of-the-art QCL.A minimum power consumption of 3.65 W was measured for the QCL,uncooled,with a high-reflectivity（HR） coating on its rear facet.

引用

页码：202 / 205

页数：4

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