Total ionizing dose effect of gamma rays on H-gate PDSOI MOS devices at different dose rates

被引：0

作者：

Qian-Qiong Wang ^{[1
]}

Hong-Xia Liu ^{[1
]}

Shu-Long Wang ^{[1
]}

Chen-Xi Fei ^{[1
]}

Dong-Dong Zhao ^{[1
]}

Shu-Peng Chen ^{[1
]}

Wei Chen ^{[1
]}

机构：

[1] Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics,Xidian University

来源：

NuclearScienceandTechniques | 2017年 / 28卷 / 10期

基金：

中国国家自然科学基金;

关键词：

PDSOI device; Total dose irradiation; Interface states; Mobility;

D O I：

暂无

中图分类号：

TN386 [场效应器件];

学科分类号：

摘要：

The total dose effect of;Co γ-rays on 0.8μm H-gate partially depleted-silicon-on-insulator NMOS devices was investigated at different irradiation doses. The results show that the shift in saturation current at high dose rate is greater than that at low dose rate, due to increase in interface-state density with decreasing dose rate; the scattering effect of interface state on electrons in the channel causes degradation in carrier mobility; and the body current and transconductance of the back gate enhance low-doserate sensitivity when the irradiation is under OFF-bias. A double transconductance peak is observed at 3 kGy（Si）under high dose rates.

引用

页码：52 / 58

页数：7

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