宽禁带半导体SiC功率器件发展现状及展望

[1] S波段系列SiC MESFET器件研制 [J]. 微纳电子技术, 2008, (06) : 322 - 325+333

[2] n型4H-SiC同质外延层上欧姆接触的研究 [J]. 半导体技术, 2007, (10) : 867 - 870

[3] Improved double-recessed 4H-SiC MESFETs structure with recessed source/drain drift region [J]. MICROELECTRONIC ENGINEERING, 2007, 84 (12) : 2888 - 2891

[4] Advances in SiC materials and devices: an industrial point of view[J] . R.R Siergiej,R.C Clarke,S Sriram,A.K Agarwal,R.J Bojko,A.W Morse,V Balakrishna,M.F MacMillan,A.A Burk,Jr,C.D Brandt.Materials Science & Engineering B . 1999

[5] High-Voltage Self-Aligned p-Channel DMOS-IGBTs in 4H-SiC .2 Y.Sui,X.Wang,J.A.Cooper. IEEE Electron Device Letters . 2007

[6] High temperature characterization of 4H-SiC bipolar junction transistors .2 K.Sumi,A.Anant,R.James,et al. Materials Science Forum . 2005

[1] S波段系列SiC MESFET器件研制 [J]. 微纳电子技术, 2008, (06) : 322 - 325+333

[2] n型4H-SiC同质外延层上欧姆接触的研究 [J]. 半导体技术, 2007, (10) : 867 - 870

[3] Improved double-recessed 4H-SiC MESFETs structure with recessed source/drain drift region [J]. MICROELECTRONIC ENGINEERING, 2007, 84 (12) : 2888 - 2891

[4] Advances in SiC materials and devices: an industrial point of view[J] . R.R Siergiej,R.C Clarke,S Sriram,A.K Agarwal,R.J Bojko,A.W Morse,V Balakrishna,M.F MacMillan,A.A Burk,Jr,C.D Brandt.Materials Science & Engineering B . 1999

[5] High-Voltage Self-Aligned p-Channel DMOS-IGBTs in 4H-SiC .2 Y.Sui,X.Wang,J.A.Cooper. IEEE Electron Device Letters . 2007

[6] High temperature characterization of 4H-SiC bipolar junction transistors .2 K.Sumi,A.Anant,R.James,et al. Materials Science Forum . 2005