Influence of Ga~+ ion irradiation on thermal relaxation of exchange bias field in exchange-coupled CoFe/IrMn bilayers

被引：0

作者：

祁先进 ^{[1
]}

王寅岗 ^{[1
]}

缪雪飞 ^{[1
]}

李子全 ^{[1
]}

黄一中 ^{[2
,3
]}

机构：

[1] College of Materials Science and Technology,Nanjing University of Aeronautics and Astronautics

[2] Department of Materials,Oxford University,Oxford OX1 3PH,UK

[3] School of Materials Science and Engineering,Nanyang Technological University,Singapore

来源：

Chinese Physics B | 2011年 / 20卷 / 05期

基金：

中国国家自然科学基金;

关键词：

thermal relaxation; exchange bias; ion irradiation; energy barrier;

D O I：

暂无

中图分类号：

O611.3 [性质];

学科分类号：

070301 ; 081704 ;

摘要：

This paper reports that the CoFe/IrMn bilayers are deposited by magnetron sputtering on the surfaces of thermallyoxidized Si substrates.It investigates the thermal relaxations of both non-irradiated and Ga + ion irradiated CoFe/IrMn bilayers by means of holding the bilayers in a negative saturation field.The results show that exchange bias field decreases with the increase of holding time period for both non-irradiated and Ga + ion irradiated CoFe/IrMn bilayers.Exchange bias field is also found to be smaller upon irradiation at higher ion dose.This reduction of exchange bias field is attributed to the change of energy barrier induced by ion-radiation.

引用

页码：392 / 396

页数：5

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