Channel temperature determination of a multifinger AlGaN/GaN high electron mobility transistor using a micro-Raman technique

被引：0

作者：

杨丽媛 ^{[1
]}

薛晓咏 ^{[1
]}

张凯 ^{[1
]}

郑雪峰 ^{[1
]}

马晓华 ^{[1
,2
]}

郝跃 ^{[1
]}

机构：

[1] Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University

[2] School of Technical Physics, Xidian University

来源：

Chinese Physics B | 2012年 / 21卷 / 07期

基金：

中国国家自然科学基金; 中央高校基本科研业务费专项资金资助;

关键词：

AlGaN/GaN high electron mobility transistors; Raman spectroscopy; temperature;

D O I：

暂无

中图分类号：

TN32 [半导体三极管（晶体管）];

学科分类号：

摘要：

Self-heating in a multifinger AlGaN/GaN high electron mobility transistor (HEMT) is investigated by micro-Raman spectroscopy. The device temperature is probed on the die as a function of applied bias. The operating temperature of the AlGaN/GaN HEMT is estimated from the calibration curve of a passively heated AlGaN/GaN structure. A linear increase of junction temperature is observed when direct current dissipated power is increased. When the power dissipation is 12.75 W at a drain voltage of 15 V, a peak temperature of 69.1°C is observed at the gate edge on the drain side of the central finger. The position of the highest temperature corresponds to the high-field region at the gate edge.

引用

页码：488 / 490

页数：3

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