High Power 980 nm InGaAs/AlGaAs Strained Quantum Well Lasers

被引：0
|
作者：
YIN Tao
DU Jinyu
LIAN Peng
XU Zuntu
CHEN Changhua
GUO Weiling
LIU Ying
LI Shuang
GAO Guo
ZOU Deshu
CHEN Jianxin
SHEN Guangdi(Department of Electrical Engineering
机构：
来源：
Chinese Journal of Lasers | 1999年 / 05期
关键词：
carbon doped; InGaAs/GaAs/AlGaAs; strained quantum well lasers; MOCVD;
D O I：
暂无
中图分类号：
TN24 [激光技术、微波激射技术];
学科分类号：
0803 ; 080401 ; 080901 ;
摘要：
By low-pressure metalorganic chemical vapor depostion (LP-MOCVD) system,InGaAs/AlGaAs graded-index separate-confinement heterostructure strained quantum Well lasers are grown with carbon doped the upper cladding layer and the capping layer. Carbon tetracholride (CCl4) is used as the carbon source. 100μm oxide stripe lasers are fabricated,and the laser output power per facet (uncoated) reaches 1. 2W with 2A injection current under the room temperature continuous wave (CW) operation. The threshold current density is 150A/cm2 with 1000μm cavity length. The slope efficiency per facet reaches 0. 53W/A, and the total external differential quantum efficiency is above 85%. The relations between the threshold current densities, the differential quantum efficiency and the cavity length are studied.
引用
收藏
页码：397 / 401
页数：5
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