Computer Simulation for Profiles of Impurities in Silicon Epitaxial Layer

被引：0
|
作者：
Sun Yicai Hebei Institute of TechnologyYu Chengzhen Tianjin’s Semiconductor Material Factory
机构：
来源：
RareMetals | 1989年 / 02期
关键词：
Simulation;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A phenomenological model for SiCl+Hreduction epitaxy with PClas dopant was established and the concernedparameters were obtained through experiments.We have compiled a computer simulation program of BASIC algorithmic lan-guage to solve diffusion equations numerically and have obtained profiles of impurities in epitaxial layer and in the substrate.Therelationship between resistivity of n-type epitaxial layer and the concentration and flow of PCldoping source under a certaingrowth condition has also been found.The optimum condition for precise control of parameters of epitaxial layer can be chosenby the computer simulation results.These results are very useful to practical production,so that the good economical benefit canbe obviously obtained.
引用
收藏
页码：49 / 57
页数：9
相关论文
共 50 条
  • [21] Ferromagnetism in epitaxial germanium and silicon layers supersaturated with managanese and iron impurities
    E. S. Demidov
    Yu. A. Danilov
    V. V. Podol’skiĭ
    V. P. Lesnikov
    M. V. Sapozhnikov
    A. I. Suchkov
    JETP Letters, 2006, 83 : 568 - 571
  • [22] Ferromagnetism in epitaxial germanium and silicon layers supersaturated with manganese and iron impurities
    Demidov, E. S.
    Danilov, Yu. A.
    Podol'skii, V. V.
    Lesnikov, V. P.
    Sapozhnikov, M. V.
    Suchkov, A. I.
    JETP LETTERS, 2006, 83 (12) : 568 - 571
  • [23] External Gettering of Metallic Impurities by Black Silicon Layer
    Ayvazyan, Gagik
    Hakhoyan, Levon
    Ayvazyan, Karen
    Aghabekyan, Arthur
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2023, 220 (05):
  • [24] ORIGIN AND REDUCTION OF IMPURITIES AT GAAS EPITAXIAL LAYER-SUBSTRATE INTERFACES
    KANBER, H
    YANG, HT
    ZIELINSKI, T
    WHELAN, JM
    JOURNAL OF CRYSTAL GROWTH, 1988, 91 (04) : 632 - 638
  • [25] STUDY ON THE DECREASING GRADIENT DISTRIBUTION OF IMPURITIES IN GaAs EPITAXIAL LAYER.
    Shi, Yi-He
    Ding, Mo-Yuan
    Li, Shuang-Xi
    Xiyou jinshu, 1988, 7 (01): : 75 - 76
  • [26] FABRICATING AN ALL-EPITAXIAL SILICON QUANTUM COMPUTER
    Tucker, J. R.
    QUANTUM INFORMATION & COMPUTATION, 2001, 1 : 129 - 133
  • [27] Fabricating an all-epitaxial silicon quantum computer
    Tucker, JR
    Shen, TC
    EXPERIMENTAL IMPLEMENTATION OF QUANTUM COMPUTATION, 2001, : 149 - 154
  • [28] Fabricating an all-epitaxial silicon quantum computer
    Tucker, J.R.
    Shen, T.-C.
    Quantum Information and Computation, 2001, 1 (SUPPL. 1): : 129 - 133
  • [29] ANALOG COMPUTATION OF SILICON CRYSTAL PROFILES WITH 3 ACTIVE IMPURITIES
    KOLB, KM
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1958, 105 (08) : C163 - C163
  • [30] Evaluation of the influence of an embedded porous silicon layer on the bulk lifetime of epitaxial layers and the interface recombination at the epitaxial layer/porous silicon interface
    Radhakrishnan, Hariharsudan Sivaramakrishnan
    Dross, Frederic
    Debucquoy, Maarten
    Rosenits, Philipp
    Van Nieuwenhuysen, Kris
    Gordon, Ivan
    Poortmans, Jef
    Mertens, Robert
    PROGRESS IN PHOTOVOLTAICS, 2014, 22 (11): : 1118 - 1127
12345