Computer Simulation for Profiles of Impurities in Silicon Epitaxial Layer

A phenomenological model for SiCl+Hreduction epitaxy with PClas dopant was established and the concernedparameters were obtained through experiments.We have compiled a computer simulation program of BASIC algorithmic lan-guage to solve diffusion equations numerically and have obtained profiles of impurities in epitaxial layer and in the substrate.Therelationship between resistivity of n-type epitaxial layer and the concentration and flow of PCldoping source under a certaingrowth condition has also been found.The optimum condition for precise control of parameters of epitaxial layer can be chosenby the computer simulation results.These results are very useful to practical production,so that the good economical benefit canbe obviously obtained.