Effect of LaNiO3 Interlayer on the Dielectric Properties of Ba0.5Sr0.5TiO3 Thin Film on Si Substrate

被引：0
|
作者：
张丛春 [1 ]
杨春生 [1 ]
石金川 [1 ]
饶瑞 [2 ]
机构：
[1] Institute of Micro and Nano Science and Technology,Shanghai Jiaotong University
[2] GESEC R&D Inc.140 rue du Lourmel
来源：
Journal of Shanghai Jiaotong University(Science) | 2009年 / 14卷 / 02期
基金：
中国国家自然科学基金;
关键词：
magnetron sputtering; thin films; orientation; buffer layer; dielectric properties;
D O I：
暂无
中图分类号：
O484 [薄膜物理学];
学科分类号：
080501 ; 1406 ;
摘要：
In this study,(100)-oriented growth of BaSrTiO(BST)/LaNiO(LNO) stacks was obtained on Pt(111)/SiO/Si substrates by r.f.magnetron sputtering.The orientation of the subsequently deposited BaSrTiOthin film was strongly affected by the LNO under layer,and the BST thin film deposited on the(100)LNO-coated Si substrate was also found to have a significant(100)-oriented texture.Effects of LNO interlayer on the dielectric properties of BST thin films were investigated.As a result,the tunability of BST thin film was greatly improved with the insertion of(100)-oriented LNO under layer with proper thickness.
引用
收藏
页码：133 / 136
页数：4
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