Advanced SPICE-Modeling of 4H-SiC MESFETs

被引：1
|
作者：
徐跃杭
徐锐敏
延波
王磊
机构：
[1] Chengdu 610054 China
[2] School of Electronic Engineering University of Electronic Science and Technology of China
来源：
JournalofElectronicScienceandTechnologyofChina | 2007年 / 01期
关键词：
4H-SiC MESFET; large signal model; simulation program with integrated circuit emphasis(SPICE);
D O I：
暂无
中图分类号：
TN386 [场效应器件];
学科分类号：
摘要：
A modified drain source current suitable for simulation program with integrated circuit emphasis(SPICE) simulations of SiC MESFETs is presented in this paper. Accurate modeling of SiC MESFET is achieved by introducing three parameters in Triquint’s own model(TOM). The model,which is single piece and continuously differentiable,is verified by measured direct current(DC) I-V curves and scattering parameters(up to 20 GHz).
引用
收藏
页码：62 / 65
页数：4
相关论文
共 50 条
  • [1] Surface control of 4H-SiC MESFETs
    Hilton, KP
    Uren, MJ
    Hayes, DG
    Johnson, HK
    Wilding, PJ
    SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 1387 - 1390
  • [2] Performance comparison of 4H-SiC MESFETs
    Prasad, D. Anil
    Komaragiri, Rama
    2013 ANNUAL INTERNATIONAL CONFERENCE ON EMERGING RESEARCH AREAS & 2013 INTERNATIONAL CONFERENCE ON MICROELECTRONICS, COMMUNICATIONS & RENEWABLE ENERGY (AICERA/ICMICR), 2013,
  • [3] Fabrication and characterization of 4H-SiC MESFETs
    Ning, Jin
    Zhang, Yang
    Liu, Zhongli
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 2007, 28 (SUPPL.): : 385 - 387
  • [4] Suppression of instabilities in 4H-SiC microwave MESFETs
    Hilton, KP
    Uren, MJ
    Hayes, DG
    Wilding, PJ
    Smith, BH
    8TH IEEE INTERNATIONAL SYMPOSIUM ON HIGH PERFORMANCE ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS, 2000, : 67 - 70
  • [5] Fabrication and characterization of 4H-SiC planar MESFETs
    Na, HJ
    Moon, JH
    Yim, JH
    Lee, JB
    Kim, HJ
    MICROELECTRONIC ENGINEERING, 2006, 83 (01) : 160 - 164
  • [6] Neutron radiation effect on 4H-SiC MESFETs and SBDs
    张林
    张义门
    张玉明
    韩超
    半导体学报, 2010, 31 (11) : 29 - 32
  • [7] Surface induced instabilities in 4H-SiC microwave MESFETs
    Hilton, KP
    Uren, MJ
    Hayes, DG
    Wilding, PJ
    Johnson, HK
    Guest, JJ
    Smith, BH
    SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 1251 - 1254
  • [8] Passivation effect on channel recessed 4H-SiC MESFETs
    Cha, HY
    Thomas, CI
    Koley, G
    Eestman, LF
    Spencer, MG
    SILICON CARBIDE AND RELATED MATERIALS - 2002, 2002, 433-4 : 749 - 752
  • [9] The extraction method for trap parameters in 4H-SiC MESFETs
    Lu Hong-Liang
    Zhang Yi-Men
    Zhang Yu-Ming
    Che Yong
    Wang Yue-Hu
    Chen Liang
    ACTA PHYSICA SINICA, 2008, 57 (05) : 2871 - 2874
  • [10] Surface induced instabilities in 4H-SiC microwave MESFETs
    Hilton, K.P.
    Uren, M.J.
    Hayes, D.G.
    Wilding, P.J.
    Johnson, H.K.
    Guest, J.J.
    Smith, B.H.
    Materials Science Forum, 2000, 338
12345