The binding energy of a hydrogenic impurity in self-assembled double quantum dots

被引:0
|
作者
张红 [1 ]
王学 [1 ]
赵剑锋 [1 ]
刘建军 [2 ]
机构
[1] College of Science,Hebei University of Engineering
[2] College of Physical Science and Information Engineering,Hebei Normal University
基金
中国国家自然科学基金;
关键词
hydrogenic impurity; double quantum dots; binding energy; magnetic field;
D O I
暂无
中图分类号
O471.1 [半导体量子理论];
学科分类号
070205 ; 080501 ; 0809 ; 080903 ;
摘要
The binding energy of a hydrogenic impurity in self-assembled double quantum dots is calculated via the finite-difference method.The variation in binding energy with donor position,structure parameters and external magnetic field is studied in detail.The results found are:(i) the binding energy has a complex behaviour due to coupling between the two dots;(ii) the binding energy is much larger when the donor is placed in the centre of one dot than in other positions;and (iii) the external magnetic field has different effects on the binding energy for different quantum-dot sizes or lateral confinements.
引用
收藏
页码:377 / 381
页数:5
相关论文
共 50 条
  • [11] Self-assembled semiconductor quantum dots
    Warburton, RJ
    [J]. CONTEMPORARY PHYSICS, 2002, 43 (05) : 351 - 364
  • [12] Epitaxially self-assembled quantum dots
    Petroff, PM
    Lorke, A
    Imamoglu, A
    [J]. PHYSICS TODAY, 2001, 54 (05) : 46 - 52
  • [13] Self-assembled metal quantum dots
    Chen, L. J.
    Su, P. Y.
    Liang, J. M.
    Hu, J. C.
    Wu, W. W.
    Cheng, S. L.
    [J]. International Journal of Nanoscience, Vol 3, No 6, 2004, 3 (06): : 877 - 889
  • [14] Double resonance study of hole burning in self-assembled quantum dots
    Clarke, DG
    Pidgeon, CR
    Wells, JPR
    Bradley, IV
    Murray, R
    Murdin, BN
    [J]. PHYSICA B-CONDENSED MATTER, 2002, 314 (1-4) : 474 - 476
  • [15] Polaron contributions to the biexciton binding energies in self-assembled quantum dots
    Machnikowski, Pawel
    [J]. PHYSICAL REVIEW B, 2011, 83 (03)
  • [16] Impurity doping in self-assembled InAs/GaAs quantum dots by selection of growth steps
    Inoue, Tomoya
    Kido, Satoshi
    Sasayama, Kengo
    Kita, Takashi
    Wada, Osamu
    [J]. JOURNAL OF APPLIED PHYSICS, 2010, 108 (06)
  • [17] Electronic structure of self-assembled InAs/InP quantum dots: Comparison with self-assembled InAs/GaAs quantum dots
    Gong, Ming
    Duan, Kaimin
    Li, Chuan-Feng
    Magri, Rita
    Narvaez, Gustavo A.
    He, Lixin
    [J]. PHYSICAL REVIEW B, 2008, 77 (04)
  • [18] Self-assembled quantum dots: A study of strain energy and intersubband transitions
    Lin, YY
    Singh, J
    [J]. JOURNAL OF APPLIED PHYSICS, 2002, 92 (10) : 6205 - 6210
  • [19] Hole energy spectrum in Ge self-assembled quantum dots in Si
    Dvurechensky, AV
    Yakimov, AI
    Markov, VA
    Nikiforov, AI
    Pchelyakov, OP
    [J]. IZVESTIYA AKADEMII NAUK SERIYA FIZICHESKAYA, 1999, 63 (02): : 307 - 311
  • [20] Designing quantum systems in self-assembled quantum dots
    Korkusinski, M
    Sheng, W
    Hawrylak, P
    [J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2003, 238 (02): : 246 - 249