Optical Properties of Atomic Defects in Hexagonal Boron Nitride Flakes under High Pressure

被引：0
|
作者：
赵晓宇 [1 ,2 ]
黄君辉 [1 ,2 ]
卓志瑶 [1 ,2 ]
薛永洲 [1 ]
丁琨 [1 ]
窦秀明 [1 ,2 ]
刘剑 [1 ,2 ]
孙宝权 [1 ,2 ]
机构：
[1] State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors,Chinese Academy of Sciences
[2] College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences
来源：
Chinese Physics Letters | 2020年 / 37卷 / 04期
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D O I：
暂无
中图分类号：
O613.81 []; O482.3 [光学性质];
学科分类号：
070205 ; 070301 ; 0805 ; 080502 ; 0809 ; 081704 ;
摘要：
We investigate the pressure spectral characteristics and the effective tuning of defect emissions in hexagonal boron nitride(hBN) at low temperatures using a diamond anvil cell(DAC). It is found that the redshift rate of emission energy is up to 10 meV/GPa, demonstrating a controllable tuning of single photon emitters through pressure.Based on the distribution character of pressure coefficients as a function of wavelength, different kinds of atomic defect states should be responsible for the observed defect emissions.
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页码：68 / 71
页数：4
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