High-performance 4H-SiC junction barrier Schottky diodes with double resistive termination extensions

被引：0

作者：

郑柳 ^{[1
]}

张峰 ^{[1
]}

刘胜北 ^{[1
]}

董林 ^{[1
]}

刘兴昉 ^{[1
]}

樊中朝 ^{[2
]}

刘斌 ^{[1
]}

闫果果 ^{[1
]}

王雷 ^{[1
]}

赵万顺 ^{[1
]}

孙国胜 ^{[1
]}

何志 ^{[1
]}

杨富华 ^{[2
]}

机构：

[1] Key Laboratory of Semiconductor Material Sciences,Institute of Semiconductors,Chinese Academy of Sciences

[2] Engineering Research Center for Semiconductor Integrated Technology,Institute of Semiconductors,Chinese Academy of Sciences

来源：

Chinese Physics B | 2013年 / 22卷 / 09期

基金：

中国国家自然科学基金;

关键词：

4H-SiC; junction barrier Schottky (JBS) diode; high-temperature annealed resistive termination extension (HARTE);

D O I：

暂无

中图分类号：

TN311.7 [];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ;

摘要：

4H-SiC junction barrier Schottky (JBS) diodes with a high-temperature annealed resistive termination extension (HARTE) are designed, fabricated and characterized in this work. The differential specific on-state resistance of the device is as low as 3.64 m ·cm2 with a total active area of 2.46×10-3 cm2 . Ti is the Schottky contact metal with a Schottky barrier height of 1.08 V and a low onset voltage of 0.7V. The ideality factor is calculated to be 1.06. Al implantation annealing is performed at 1250℃ in Ar, while good reverse characteristics are achieved. The maximum breakdown voltage is 1000 V with a leakage current of 9×10-5 A on chip level. These experimental results show good consistence with the simulation results and demonstrate that high-performance 4H-SiC JBS diodes can be obtained based on the double HARTE structure.

引用

页码：572 / 577

页数：6

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