Highly Tunable Perpendicular Magnetic Anisotropy and Anisotropic Magnetoresistance in Ru-Doped La0.67Sr0.33MnO3 Epitaxial Films
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华恩达
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Hefei National Research Center for Physical Sciences at Microscale, University of Science and Technology of ChinaHefei National Research Center for Physical Sciences at Microscale, University of Science and Technology of China
华恩达
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戴坤杰
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Hefei National Research Center for Physical Sciences at Microscale, University of Science and Technology of ChinaHefei National Research Center for Physical Sciences at Microscale, University of Science and Technology of China
戴坤杰
[1
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王庆
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Hefei National Research Center for Physical Sciences at Microscale, University of Science and Technology of ChinaHefei National Research Center for Physical Sciences at Microscale, University of Science and Technology of China
王庆
[1
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叶欢
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Hefei National Research Center for Physical Sciences at Microscale, University of Science and Technology of ChinaHefei National Research Center for Physical Sciences at Microscale, University of Science and Technology of China
叶欢
[1
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刘宽
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Hefei National Research Center for Physical Sciences at Microscale, University of Science and Technology of ChinaHefei National Research Center for Physical Sciences at Microscale, University of Science and Technology of China
刘宽
[1
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章金凤
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Hefei National Research Center for Physical Sciences at Microscale, University of Science and Technology of ChinaHefei National Research Center for Physical Sciences at Microscale, University of Science and Technology of China
章金凤
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鲁京迪
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Hefei National Research Center for Physical Sciences at Microscale, University of Science and Technology of ChinaHefei National Research Center for Physical Sciences at Microscale, University of Science and Technology of China
鲁京迪
[1
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刘楷
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Hefei National Research Center for Physical Sciences at Microscale, University of Science and Technology of ChinaHefei National Research Center for Physical Sciences at Microscale, University of Science and Technology of China
刘楷
[1
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金锋
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Hefei National Research Center for Physical Sciences at Microscale, University of Science and Technology of ChinaHefei National Research Center for Physical Sciences at Microscale, University of Science and Technology of China
金锋
[1
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王凌飞
[1
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吴文彬
[1
,2
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机构:
[1] Hefei National Research Center for Physical Sciences at Microscale, University of Science and Technology of China
[2] Collaborative Innovation Center of Advanced Microstructures, Nanjing University
As a prototypical half-metallic ferromagnet, La0.67Sr0.33MnO3(LSMO) has been extensively studied due to its versatile physical properties and great potential in spintronic applications. However, the weak perpendicular magnetic anisotropy(PMA) limits the controllability and detection of magnetism in LSMO, thus hindering the realization of oxide-based spintronic devices with low energy consumption and high integration level. Motivated by this challenge, we develop an experimental approach to enhance the PMA of LSMO epitaxial films. By cooperatively introducing 4d Ru doping and a moderate compressive strain, the maximum uniaxial magnetic anisotropy in Ru-doped LSMO can reach 3.0 × 105J/m3at 10 K. Furthermore, we find a significant anisotropic magnetoresistance effect in these Ru-doped LSMO films, which is dominated by the strong PMA. Our findings offer an effective pathway to harness and detect the orientations of magnetic moments in LSMO films, thus promoting the feasibility of oxide-based spintronic devices, such as spin valves and magnetic tunnel junctions.
机构:Indira Gandhi Ctr Atom Res, Div Mat Sci, Kalpakkam 603102, Tamil Nadu, India
Lakshmi, LS
Sridharan, V
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Indira Gandhi Ctr Atom Res, Div Mat Sci, Kalpakkam 603102, Tamil Nadu, IndiaIndira Gandhi Ctr Atom Res, Div Mat Sci, Kalpakkam 603102, Tamil Nadu, India
Sridharan, V
Natarajan, DV
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机构:Indira Gandhi Ctr Atom Res, Div Mat Sci, Kalpakkam 603102, Tamil Nadu, India
Natarajan, DV
Chandra, S
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机构:Indira Gandhi Ctr Atom Res, Div Mat Sci, Kalpakkam 603102, Tamil Nadu, India
Chandra, S
Sastry, VS
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机构:Indira Gandhi Ctr Atom Res, Div Mat Sci, Kalpakkam 603102, Tamil Nadu, India
Sastry, VS
Radhakrishnan, TS
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机构:Indira Gandhi Ctr Atom Res, Div Mat Sci, Kalpakkam 603102, Tamil Nadu, India
Radhakrishnan, TS
Pandian, P
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机构:Indira Gandhi Ctr Atom Res, Div Mat Sci, Kalpakkam 603102, Tamil Nadu, India
Pandian, P
Joseyphus, RJ
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机构:Indira Gandhi Ctr Atom Res, Div Mat Sci, Kalpakkam 603102, Tamil Nadu, India
Joseyphus, RJ
Narayanasamy, A
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机构:Indira Gandhi Ctr Atom Res, Div Mat Sci, Kalpakkam 603102, Tamil Nadu, India