Development of cryogenically-cooled low noise amplifier for mobile base station receivers

被引：0
|
作者：
ZHANG XU~1
2College of lnformation Technical Science
机构：
来源：
Science Bulletin | 2011年 / 35期
基金：
国家高技术研究发展计划(863计划);
关键词：
low noise amplifier; low temperature; gain; noise figure;
D O I：
暂无
中图分类号：
TN722.3 [低噪声放大器];
学科分类号：
080902 ;
摘要：
A new circuit model for designing and manufacturing an S-band low noise amplifier(LNA) with the software,Advanced Design System(ADS),is introduced in this paper.The proposed model involves shunted impedance at the grid to achieve a stable LNA without measuring the S-parameters of transistors at low temperatures.The LNA was measured over the operation band of 2.2-2.3 GHz,which has input and output standing wave ratios below 1.2.The noise figure of the manufactured LNA was about 0.2 dB and the gain was above 22 dB,which indicated that our LNA worked well at 77 K.
引用
收藏
页码：3884 / 3887
页数：4
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