A Novel Multi-Finger Gate Structure of AlGaN/GaN High Electron Mobility Transistor

被引：0

作者：

崔磊 ^{[1
]}

王权 ^{[1
,2
]}

王晓亮 ^{[1
,3
]}

肖红领 ^{[1
]}

王翠梅 ^{[1
]}

姜丽娟 ^{[1
]}

冯春 ^{[1
]}

殷海波 ^{[1
]}

巩稼民 ^{[2
]}

李百泉 ^{[4
]}

王占国 ^{[3
]}

机构：

[1] Key Lab of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences

[2] School of Electronic Engineering,Xi'an University of Posts and Telecommunications

[3] Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices 4. Beijing Huajin Chuangwei Technology Co.,Ltd.

来源：

Chinese Physics Letters | 2015年 / 05期

关键词：

AlGaN;

D O I：

暂无

中图分类号：

TN386 [场效应器件];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ;

摘要：

A novel multi-finger gate high electron mobility transistor（HEMT） is designed to reduce the peak electric field value at the drain-side gate edge when the device is at off-state.The effective gate length(L;) of the multi-Snger gate device is smaller than that of the field plate gate device.In this work,Seld plate gate,Sve-Gnger gate and ten-finger gate devices axe simulated.The results of the simulation indicate that the multi-finger gate device has a lower peak value than the device with the gate Seld plate.Moreover,this value would be further reduced when the number of gate fingers is increased.In addition,it has the potential to make the HEMT work in a higher frequency since it has a lower effective length of gate.

引用

页码：169 / 172

页数：4

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