Improvement of Performance of Organic Light-Emitting Diodes with Both a MoO3 Hole Injection Layer and a MoO3 Doped Hole Transport Layer
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刘伟
[1
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刘国红
[1
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刘勇
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State Key Lab of Optoelectronic Materials and Technologies,School of Physics and Engineering,Sun Yat-Sen UniversityState Key Lab of Optoelectronic Materials and Technologies,School of Physics and Engineering,Sun Yat-Sen University
刘勇
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]
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李宝军
[1
]
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周翔
[1
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[1] State Key Lab of Optoelectronic Materials and Technologies,School of Physics and Engineering,Sun Yat-Sen University
NPB;
HTL;
HIL;
OLEDs;
Improvement of Performance of Organic Light-Emitting Diodes with Both a MoO3 Hole Injection Layer and a MoO3 Doped Hole Transport Layer;
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暂无
中图分类号:
TN383.1 [];
学科分类号:
0803 ;
摘要:
We improve the performance of organic light-emitting diodes(OLEDs) with both a MoOhole injection layer(HIL) and a MoOdoped hole transport layer(HTL),and present a systematical and comparative investigation on these devices.Compared with OLEDs with only MoOHIL or MoOdoped HTL,OLEDs with both MoOHIL and MoOdoped HTL show superior performance in driving voltage,power efficiency,and stability.Based on the typical NPB/Alqheterojunction structure,OLEDs with both MoOHIL and MoOdoped HTL show a driving voltage of 5.4 V and a power efficiency of 1.41 lm/W for 1000 cd/m~2,and a lifetime of around 0.88 h with an initial luminance of 5268 cd/m~2 under a constant current of 190 mA/cm2 operation in air without encapsulation.While OLEDs with only MoOHIL or MoOdoped HTL show higher driving voltages of 6.4 V or 5.8 V and lower power efficiencies of 1.201m/W or 1.341m/W for 1000cd/m~2,and a shorter lifetime of 0.33 or 0.60 h with an initial luminance of around 5122 or 5300cd/m~2 under a constant current of 200 or 216mA/cm~2 operation.Our results demonstrate clearly that using both MoOHIL and MoOdoped HTL is a simple and effective approach to simultaneously improve both the hole injection and transport efficiency,resulting from the lowered energy barrier at the anode interface and the increased hole carrier density in MoOdoped HTL.
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Seoul Natl Univ, Interuniv Semicond Res Ctr, Sch Elect Engn & Comp Sci, Seoul 151744, South KoreaSeoul Natl Univ, Interuniv Semicond Res Ctr, Sch Elect Engn & Comp Sci, Seoul 151744, South Korea
Yun, Jinyoung
Yang, Jungjin
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Seoul Natl Univ, Interuniv Semicond Res Ctr, Sch Elect Engn & Comp Sci, Seoul 151744, South KoreaSeoul Natl Univ, Interuniv Semicond Res Ctr, Sch Elect Engn & Comp Sci, Seoul 151744, South Korea
Yang, Jungjin
Hong, Yongtaek
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Seoul Natl Univ, Interuniv Semicond Res Ctr, Sch Elect Engn & Comp Sci, Seoul 151744, South KoreaSeoul Natl Univ, Interuniv Semicond Res Ctr, Sch Elect Engn & Comp Sci, Seoul 151744, South Korea
Hong, Yongtaek
Lee, Changhee
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Seoul Natl Univ, Interuniv Semicond Res Ctr, Sch Elect Engn & Comp Sci, Seoul 151744, South KoreaSeoul Natl Univ, Interuniv Semicond Res Ctr, Sch Elect Engn & Comp Sci, Seoul 151744, South Korea
Lee, Changhee
Song, Woo Jun
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Samsung SDI Co Ltd, Yongin 446577, South KoreaSeoul Natl Univ, Interuniv Semicond Res Ctr, Sch Elect Engn & Comp Sci, Seoul 151744, South Korea
Song, Woo Jun
Sung, Yeun Joo
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Samsung SDI Co Ltd, Yongin 446577, South KoreaSeoul Natl Univ, Interuniv Semicond Res Ctr, Sch Elect Engn & Comp Sci, Seoul 151744, South Korea
机构:
Chinese Acad Sci, NIMTE, Inst New Energy Technol, Ningbo 315201, Zhejiang, Peoples R China
Shantou Univ, Dept Chem, Coll Sci, Shantou 515063, Peoples R ChinaChinese Acad Sci, NIMTE, Inst New Energy Technol, Ningbo 315201, Zhejiang, Peoples R China
Wang, Guojie
Jiu, Tonggang
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Chinese Acad Sci, NIMTE, Inst New Energy Technol, Ningbo 315201, Zhejiang, Peoples R ChinaChinese Acad Sci, NIMTE, Inst New Energy Technol, Ningbo 315201, Zhejiang, Peoples R China
Jiu, Tonggang
Li, Pandeng
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Chinese Acad Sci, NIMTE, Inst New Energy Technol, Ningbo 315201, Zhejiang, Peoples R ChinaChinese Acad Sci, NIMTE, Inst New Energy Technol, Ningbo 315201, Zhejiang, Peoples R China
Li, Pandeng
Li, Jun
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Chinese Acad Sci, NIMTE, Inst New Energy Technol, Ningbo 315201, Zhejiang, Peoples R ChinaChinese Acad Sci, NIMTE, Inst New Energy Technol, Ningbo 315201, Zhejiang, Peoples R China
Li, Jun
Sun, Chunming
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Chinese Acad Sci, NIMTE, Inst New Energy Technol, Ningbo 315201, Zhejiang, Peoples R ChinaChinese Acad Sci, NIMTE, Inst New Energy Technol, Ningbo 315201, Zhejiang, Peoples R China
Sun, Chunming
Lu, Fushen
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Shantou Univ, Dept Chem, Coll Sci, Shantou 515063, Peoples R ChinaChinese Acad Sci, NIMTE, Inst New Energy Technol, Ningbo 315201, Zhejiang, Peoples R China
Lu, Fushen
Fang, Junfeng
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Chinese Acad Sci, NIMTE, Inst New Energy Technol, Ningbo 315201, Zhejiang, Peoples R ChinaChinese Acad Sci, NIMTE, Inst New Energy Technol, Ningbo 315201, Zhejiang, Peoples R China
机构:
State Key Laboratory of Surface Physics,Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education)and Collaborative Innovation Center of Advanced Microstructures,Fudan UniversityState Key Laboratory of Surface Physics,Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education)and Collaborative Innovation Center of Advanced Microstructures,Fudan University
于浩淼
彭欢
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State Key Laboratory of Surface Physics,Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education)and Collaborative Innovation Center of Advanced Microstructures,Fudan UniversityState Key Laboratory of Surface Physics,Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education)and Collaborative Innovation Center of Advanced Microstructures,Fudan University
彭欢
侯晓远
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State Key Laboratory of Surface Physics,Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education)and Collaborative Innovation Center of Advanced Microstructures,Fudan UniversityState Key Laboratory of Surface Physics,Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education)and Collaborative Innovation Center of Advanced Microstructures,Fudan University
机构:
NUPT, KLOEID, Nanjing 210023, Jiangsu, Peoples R China
NUPT, IAM, Nanjing 210023, Jiangsu, Peoples R ChinaNUPT, KLOEID, Nanjing 210023, Jiangsu, Peoples R China
Zeng Wenjin
Bi Ran
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机构:
NUPT, KLOEID, Nanjing 210023, Jiangsu, Peoples R China
NUPT, IAM, Nanjing 210023, Jiangsu, Peoples R ChinaNUPT, KLOEID, Nanjing 210023, Jiangsu, Peoples R China
Bi Ran
Zhang Hongmei
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NUPT, KLOEID, Nanjing 210023, Jiangsu, Peoples R China
NUPT, IAM, Nanjing 210023, Jiangsu, Peoples R ChinaNUPT, KLOEID, Nanjing 210023, Jiangsu, Peoples R China
Zhang Hongmei
Huang Wei
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机构:
NUPT, KLOEID, Nanjing 210023, Jiangsu, Peoples R ChinaNUPT, KLOEID, Nanjing 210023, Jiangsu, Peoples R China