CAS scientists develop demo devices of a new MRAM

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Bulletin of the Chinese Academy of Sciences | 2007年 / 02期
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TP333 [存贮器];
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081201 ;
摘要：
The magnetic random access memory(MRAM) is a key device for the future computer, information and telecommunication technologies. CAS scientists have recently developed a demo device for a new type of MRAM, which could overcome two bottleneck problems for its development, namely, high energy consumption and low storage density.
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页码：74 / 74 +64
页数：2
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