Comparison of measurements and simulation results in 300mm CZ silicon crystal growth

被引：0
|
作者：
GAO Yu
机构：
来源：
Rare Metals | 2007年 / 06期
关键词：
silicon; simulation; interface; growth rate;
D O I：
暂无
中图分类号：
O782 [晶体生长工艺]; TN304 [材料];
学科分类号：
0702 ; 070205 ; 0703 ; 0805 ; 080501 ; 080502 ; 080903 ;
摘要：
A special thermal modeling tool, CrysVUn, which was developed by Crystal Growth Laboratory (CGL) of Fraunhofer Institute of Integrated Systems and Devices Technology in Erlangen of Germany, was used for numerical analysis of growth interface situation. The heat transportation, argon flow and melt convection have been considered. Cauchy’s first and second laws of motion have been the governing partial equations for stress calculation. The measurement results and simulation results were compared and the interface shape and thermal stress distribution during 300 mm Czochralski (CZ) silicon crystal growth with different growth rates were predicted.
引用
收藏
页码：607 / 610
页数：4
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