Different influences of u-InGaN upper waveguide on the performance of GaN-based blue and green laser diodes

被引：0

作者：

梁锋 ^{[1
,2
]}

赵德刚 ^{[1
,3
]}

江德生 ^{[1
]}

刘宗顺 ^{[1
]}

朱建军 ^{[1
]}

陈平 ^{[1
]}

杨静 ^{[1
]}

刘炜 ^{[1
]}

李翔 ^{[1
]}

刘双韬 ^{[1
]}

邢瑶 ^{[1
]}

张立群 ^{[4
]}

李沫 ^{[5
]}

张健 ^{[5
]}

机构：

[1] State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science

[2] College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences

[3] School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences

[4] Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences

[5] Microsystem & Terahertz Research Center, Chinese Academy of Engineering Physics

来源：

Chinese Physics B | 2017年 / 26卷 / 11期

基金：

中国国家自然科学基金; 国家重点研发计划;

关键词：

GaN-based laser diode; slope efficiency; waveguide;

D O I：

暂无

中图分类号：

TN31 [半导体二极管];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ;

摘要：

Performances of blue and green laser diodes（LDs） with different u-InGaN upper waveguides（UWGs） are investigated theoretically by using LASTIP. It is found that the slope efficiency（SE） of blue LD decreases due to great optical loss when the indium content of u-InGaN UWG is more than 0.02, although its leakage current decreases obviously. Meanwhile the SE of the green LD increases when the indium content of u-InGaN UWG is varied from 0 to 0.05, which is attributed to the reduction of leakage current and the small increase of optical loss. Therefore, a new blue LD structure with In;Ga;N lower waveguide（LWG） is designed to reduce the optical loss, and its slope efficiency is improved significantly.

引用

页码：214 / 219

页数：6

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