All-optical NOR gate based on injection-locking effect in a semiconductor laser

被引：0
|
作者：
HAN Liu-yan
机构：
来源：
OptoelectronicsLetters | 2008年 / 01期
关键词：
NOR; All-optical NOR gate based on injection-locking effect in a semiconductor laser; mode;
D O I：
暂无
中图分类号：
F416.6 [电气、电子工业];
学科分类号：
0202 ; 020205 ;
摘要：
A scheme for all-optical NOR logic gate is proposed based on injection-locking effect in a semiconductor laser. In this scheme, signal light injection into the laser will cause frequency shift of laser modes, as a result, the probe light into the laser can be switched between injection-locked and unlocked status, and its output power will be modulated. Theoretical analysis for this scheme is carried out by using a model to describe the dynamics of the injection-locked laser. By numerical simulation, the influence of laser bias current, laser length, injected signal power and signal frequency on the output performance of NOR logic gate is quantitatively analyzed.
引用
收藏
页码：33 / 37
页数：5
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