Controlled Growth of Large-Area Aligned Single-Crystalline Organic Nanoribbon Arrays for Transistors and Light-Emitting Diodes Driving

被引:0
|
作者
Wei Wang [1 ]
Liang Wang [1 ]
Gaole Dai [1 ]
Wei Deng [1 ]
Xiujuan Zhang [1 ]
Jiansheng Jie [1 ]
Xiaohong Zhang [1 ]
机构
[1] Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University Suzhou
基金
中国国家自然科学基金;
关键词
Large-area growth; Organic single-crystalline nanoribbon arrays; Organic field-effect transistors; Light-emitting diodes driving;
D O I
暂无
中图分类号
TN312.8 []; TN386 [场效应器件];
学科分类号
0803 ; 0805 ; 080501 ; 080502 ; 080903 ;
摘要
Organic field-effect transistors(OFETs) based on organic micro-/nanocrystals have been widely reported with charge carrier mobility exceeding 1.0 cm~2Vs, demonstrating great potential for high-performance, low-cost organic electronic applications. However, fabrication of large-area organic micro-/nanocrystal arrays with consistent crystal growth direction has posed a significant technical challenge. Here, we describe a solution-processed dip-coating technique to grow large-area, aligned 9,10-bis(phenylethynyl) anthracene(BPEA) and 6,13-bis(triisopropylsilylethynyl) pentacene(TIPSPEN) single-crystalline nanoribbon arrays. The method is scalable to a 5 9 10 cm~2 wafer substrate, with around 60% of the wafer surface covered by aligned crystals. The quality of crystals can be easily controlled by tuning the dip-coating speed. Furthermore, OFETs based on well-aligned BPEA and TIPS-PEN single-crystalline nanoribbons were constructed.By optimizing channel lengths and using appropriate metallic electrodes, the BPEA and TIPS-PEN-based OFETs showed hole mobility exceeding 2.0 cm~2Vs(average mobility 1.2 cm~2Vs) and 3.0 cm~2Vs(average mobility2.0 cm~2Vs), respectively. They both have a high on/off ratio(I/I)>10~9. The performance can well satisfy the requirements for light-emitting diodes driving.
引用
收藏
页码:193 / 203
页数:11
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