Non-Stoichiometry Effects on the Extreme Magnetoresistance in Weyl Semimetal WTe2

被引：0

作者：

龚吉祥 ^{[1
,2
]}

杨军 ^{[1
]}

葛敏 ^{[2
]}

王永建 ^{[1
]}

梁丹丹 ^{[1
]}

骆磊 ^{[1
]}

严秀 ^{[1
]}

甄伟立 ^{[1
]}

翁士瑞 ^{[1
]}

皮雳 ^{[1
,2
]}

张昌锦 ^{[1
,3
]}

朱文卡 ^{[1
]}

机构：

[1] High Magnetic Field Laboratory, Chinese Academy of Sciences

[2] Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China

[3] Institute of Physical Science and Information Technology, Anhui University

来源：

Chinese Physics Letters | 2018年 / 09期

基金：

国家重点研发计划; 中国国家自然科学基金;

关键词：

Te; MR; Non-Stoichiometry Effects on the Extreme Magnetoresistance in Weyl Semimetal WTe2;

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Non-stoichiometry effect on the extreme magnetoresistance is systematically investigated for the Weyl semimetal WTe;. Magnetoresistance and Hall resistivity are measured for the as-grown samples with a slight difference in Te vacancies and the annealed samples with increased Te vacancies. The fits to a two-band model show that the magnetoresistance is strongly dependent on the residual resistivity ratio（i.e., the degree of non-stoichiometry）,which is eventually understood in terms of electron doping that not only breaks the balance between electron-type and hole-type carrier densities, but also reduces the average carrier mobility. Thus the compensation effect and ultrahigh mobility are probably the main driving force of the extreme magnetoresistance in WTe;.

引用

页码：66 / 70

页数：5

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