Effects　of　radiation－induced　oxide　and　interface　charges　on　mobility　degradation　in　MOSFETs

被引：0
|
作者：
任迪远
余学锋
陆妩
高文玉
张国强
严荣良
机构：
来源：
NuclearScienceandTechniques | 1996年 / 03期
关键词：
MOSFET; Mathematical models; Mobility; Physical radiation effect;
D O I：
暂无
中图分类号：
O571 [原子核物理学];
学科分类号：
0827 ; 082701 ;
摘要：
Ｅｆｆｅｃｔｓｏｆｒａｄｉａｔｉｏｎ－ｉｎｄｕｃｅｄｏｘｉｄｅａｎｄｉｎｔｅｒｆａｃｅｃｈａｒｇｅｓｏｎｍｏｂｉｌｉｔｙｄｅｇｒａｄａｔｉｏｎｉｎ　ＭＯＳＦＥＴｓＲｅｎＤｉ－Ｙｕａｎ（任迪远）；ＹｕＸｕｅ－Ｆｅｎｇ（余学锋）；ＬｕＷｕ（陆妩）；Ｇａｏ...
引用
收藏
页码：183 / 186
页数：4
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