Phonon-assisted intersubband transitions in wurtzite GaN/Inx Ga1-x N quantum wells

被引：0

作者：

朱俊 ^{[1
]}

班士良 ^{[1
]}

哈斯花 ^{[2
]}

机构：

[1] Key Laboratory of Semiconductor Photovoltaic Technology, School of Physical Science and Technology, Inner Mongolia University

[2] Department of Physics, College of Sciences, Inner Mongolia University of Technology

来源：

Chinese Physics B | 2012年 / 09期

基金：

中国国家自然科学基金;

关键词：

phonon-assisted intersubband transition; wurtzite quantum well; built-in electric field;

D O I：

暂无

中图分类号：

TN386 [场效应器件];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ;

摘要：

A detailed numerical calculation on the phonon-assisted intersubband transition rates of electrons in wurtzite GaN/In x Ga 1 x N quantum wells is presented. The quantum-confined Stark effect, induced by the built-in electric field, and the ternary mixed crystal effect are considered. The electron states are obtained by iteratively solving the coupled Schrdinger and Poisson equations. The dispersion properties of each type of phonon modes are considered in the derivation of Fermi’s golden rule to evaluate the transition rates. It is indicated that the interface and half-space phonon scattering play an important role in the process of 1-2 radiative transition. The transition rate is also greatly reduced by the built-in electric field. This work can be helpful for the structural design and simulation of new semiconductor lasers.

引用

页码：449 / 454

页数：6

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