A Back-Gated Ferroelectric Field-Effect Transistor with an Al-Doped Zinc Oxide Channel

被引：0
|
作者：
贾泽 [1 ]
徐建龙 [2 ]
吴肖 [1 ]
张明明 [2 ]
刘俊杰 [3 ]
机构：
[1] School of Microelectronics and Solid-State Electronics,University of Electronic Science and Technology of China
[2] Institute of Microelectronics,Tsinghua National Laboratory for Information Science and Technology,Tsinghua University
[3] Department of Electrical Engineering and Computer Science,University of Central Florida
来源：
Chinese Physics Letters | 2015年 / 32卷 / 02期
基金：
中央高校基本科研业务费专项资金资助;
关键词：
PZT; AZO; Pt; A Back-Gated Ferroelectric Field-Effect Transistor with an Al-Doped Zinc Oxide Channel; Al;
D O I：
暂无
中图分类号：
TN386 [场效应器件];
学科分类号：
0805 ; 080501 ; 080502 ; 080903 ;
摘要：
We report a back-gated metal-oxide-ferroelectric-metal(MOFM) field-effect transistor(FET) with lead zirconate titanate(PZT) material,in which an Al doped zinc oxide(AZO) channel layer with an optimized doping concentration of 1%is applied to reduce the channel resistance of the channel layer,thus guaranteeing a large enough load capacity of the transistor.The hysteresis loops of the Pt/PZT/AZO/Ti/Pt capacitor are measured and compared with a Pt/PZT/Pt capacitor,indicating that the remnant polarization is almost 40μC/cm2and the polarization is saturated at 20 V.The measured capacitance-voltage properties are analyzed as a result of the electron depletion and accumulation switching operation conducted by the modulation of PZT on AZO channel resistance caused by the switchable remnant polarization of PZT.The switching properties of the AZO channel layer are also proved by the current-voltage transfer curves measured in the back-gated MOFM ferroelectric FET,which also show a drain current switching ratio up to about 100 times.
引用
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页码：156 / 160
页数：5
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