Effect of CeO2 on Electrical Properties of (Nb,Mn)-Doped TiO2 Varistor Ceramics

被引：1
|
作者：
王茂华 [1 ]
胡克鳌 [1 ]
赵斌元 [1 ]
张南法 [2 ]
机构：
[1] State Key Laboratory of MMCs, Shanghai Jiaotong University, Shanghai 200030, China
[2] Changzhou Chuangjie Lightning Protection Co., Ltd, Changzhou 213016, China
来源：
Journal of Rare Earths | 2005年 / 06期
关键词：
varistor; defect barrier model; TiO2; CeO2; electrical properties; rare earths;
D O I：
暂无
中图分类号：
TQ174.1 [基础理论];
学科分类号：
0805 ; 080502 ;
摘要：
The electrical properties of TiO2-based varistor ceramics with different amount of CeO2 were investigated by measuring the properties of V-I, permittivity, density and boundary defect barriers. It is found that an optimal composition doped with 0.7% CeO2 exhibits the highest nonlinear coefficient of 10.5, the highest breakdown voltage of 12.77 V·mm -1 , the ultrahigh permittivity of 82900（measured at 1 kHz）, and the highest density of 4.15 g·cm -3 , which is consistent with the highest and narrowest grain-boundary defect barriers. In order to illustrate the grain boundary barriers formation in TiO2-Nb2O5-MnCO3-CeO2 varistor, an grain-boundary defect barrier model was also introduced.
引用
收藏
页码：706 / 709 +641
页数：5
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