Photoelectronic properties and devices of 2D Xenes

被引：2

作者：

Shiqi Li ^{[1
,2
]}

Guoyi Huang ^{[2
]}

Yiding Jia ^{[2
]}

Bing Wang ^{[2
]}

Hongcheng Wang ^{[1
]}

Han Zhang ^{[2
]}

机构：

[1] School of Electrical Engineering and Intelligentization, Dongguan University of Technology

[2] College of Physics and Optoelectronic Engineering, Shenzhen University

来源：

Journal of Materials Science & Technology | 2022年 / 126卷 / 31期

关键词：

D O I：

暂无

中图分类号：

TB34 [功能材料]; TN20 [一般性问题];

学科分类号：

080501 ;

摘要：

Two-dimensional materials, especially graphene-like emerging single-element materials two-dimensional(2D) Xenes, have attracted great research interest since the advent of the graphene. In this review paper,12 kinds of different Xenes were introduced according to the group and element quality, and their main synthesis methods are outlined. The advantages and limitations of the synthesis methods are analyzed in detail. By summarizing the current photoelectronic properties of 2D Xenes materials, it is found that Xenes in the same group have similar properties, such as the buckling properties of the fourth group and the anisotropy of the fifth group. In addition, the performance of photoelectronic applications based on 2D Xenes materials are summarized, and some possible methods are proposed to improve the performance of future 2D Xenes material photoelectronic devices.

引用

页码：44 / 59

页数：16

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