Hybrid nano-scale Au with ITO structure for a high-performance near-infrared silicon-based photodetector with ultralow dark current

被引:0
|
作者
XINXIN LI [1 ,2 ,3 ]
ZHEN DENG [1 ,3 ,4 ]
JUN LI [1 ,3 ]
YANGFENG LI [1 ,3 ]
LINBAO GUO [1 ,2 ,3 ]
YANG JIANG [1 ,3 ]
ZIGUANG MA [1 ,3 ]
LU WANG [1 ,3 ]
CHUNHUA DU [1 ,3 ,4 ]
YING WANG [5 ]
QINGBO MENG [1 ,3 ]
HAIQIANG JIA [1 ,3 ,6 ]
WENXIN WANG [1 ,3 ,6 ]
WUMING LIU [1 ]
HONG CHEN [1 ,3 ,6 ]
机构
[1] Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences
[2] University of Chinese Academy of Sciences
[3] Center of Materials and Optoelectronics Engineering, University of Chinese Academy of Sciences
[4] Department of Physics, School of Science, Beijing Jiaotong University
[5] Songshan Lake Materials Laboratory
基金
中国国家自然科学基金;
关键词
D O I
暂无
中图分类号
TN15 [光电器件、光电管];
学科分类号
0803 ;
摘要
An internal photoemission-based silicon photodetector detects light below the silicon bandgap at room temperature and can exhibit spectrally broad behavior, making it potentially suited to meet the need for a near-infrared pure Si photodetector. In this work, the implementation of a thin Au insertion layer into an ITO/n-Si Schottky photodetector can profoundly affect the barrier height and significantly improve the device performance. By fabricating a nanoscale thin Au layer and an ITO electrode on a silicon substrate, we achieve a well-behaved ITO/Au/n-Si Schottky diode with a record dark current density of 3.7×10;A∕cm;at -1V and a high rectification ratio of 1.5×10;at±1V. Furthermore, the responsivity has been obviously improved without sacrificing the dark current performance of the device by decreasing the Au thickness. Such a silicon-based photodetector with an enhanced performance could be a promising strategy for the realization of a monolithic integrated pure silicon photodetector in optical communication.
引用
收藏
页码:1662 / 1670
页数:9
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