Plasmonic silicon quantum dots extend photodetection into mid-infrared range

被引：0
|
作者：
Zheyu Fang [1 ]
机构：
[1] School of Physics, State Key Lab for Mesoscopic Physics, and Collaborative Innovation Center of Quantum Matter, Peking University
来源：
Science Bulletin | 2017年 / 62卷 / 21期
关键词：
QDs; UV; NIR; Si; MIR; Plasmonic silicon quantum dots extend photodetection into mid-infrared range;
D O I：
暂无
中图分类号：
TB383.1 []; TN15 [光电器件、光电管];
学科分类号：
0803 ;
摘要：
Nowadays the development of Internet of Things(IoT)and defense technologies imperatively needs high-performance photodetectors that can work in a broadband wavelength range,in particular,covering the mid-infrared(MIR)region[1].This generates great interest in the incorporation of a series of novel optoelectronic materials and structures into the photodetectors.Graphene and colloidal quantum dots(QDs)are key players among novel materials used to fabricate high-performance photodetectors[2–4].By taking advantage of the high mobility of graphene
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页码：1430 / 1431
页数：2
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