Mid/far-infrared photo-detectors based on graphene asymmetric quantum wells

被引:0
|
作者
E Ben Salem [1 ,2 ]
R Chaabani [3 ]
S Jaziri [3 ,4 ]
机构
[1] Institut Preparatoire aux Etudes d'Ingenieurs de Tunis
[2] Laboratoire de Physique de la Matiere Condensee,Departement de Physique,Faculte des Sciences de Tunis,Campus Universitaire 2092
[3] Laboratoire de Physique de la Matiere Condensee,Departement de Physique,Facult′e des Sciences de Tunis,Campus Universitaire 2092
[4] Departement de Physique,Faculte des Sciences de Bizerte
关键词
graphene; quantum wells; reflection coefficient; photo-detector;
D O I
暂无
中图分类号
TN15 [光电器件、光电管]; O613.71 [碳C];
学科分类号
070301 ; 0803 ; 081704 ;
摘要
We conducted a theoretical study on the electronic properties of a single-layer graphene asymmetric quantum well.Quantification of energy levels is limited by electron–hole conversion at the barrier interfaces and free-electron continuum.Electron–hole conversion at the barrier interfaces can be controlled by introducing an asymmetry between barriers and taking into account the effect of the interactions of the graphene sheet with the substrate.The interaction with the substrate induces an effective mass to carriers,allowing observation of Fabry–P′erot resonances under normal incidence and extinction of Klein tunneling.The asymmetry,between barriers creates a transmission gap between confined states and free-electron continuum,allowing the large graphene asymmetric quantum well to be exploited as a photo-detector operating at mid-and far-infrared frequency regimes.
引用
收藏
页码:577 / 584
页数:8
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