Hierarchical Porous Patterns of n-type 6H-SiC Crystals via Photoelectrochemical Etching

被引:0
|
作者
Lihuan Wang [1 ]
Huihui Shao [1 ]
Xiaobo Hu [1 ]
Xiangang Xu [1 ]
机构
[1] State Key Laboratory of Crystal Materials,Shandong University
基金
中国国家自然科学基金;
关键词
SiC; Photo-electrochemical etching; Porous patterning;
D O I
暂无
中图分类号
TN304.24 [];
学科分类号
0805 ; 080501 ; 080502 ; 080903 ;
摘要
Hierarchical porous patterns have been fabricated on the C face,Si face,and cross section of n-type 6H—SiC crystal via photo-electrochemical etching using HF/C;H;OH and HF/H;O;as electrolytes.The porous layer displayed multiple and multiscale microstructures on different faces,including stalactite-like,sponge-like and dendritic porous structures on C face,echinoid micro-patterns on Si face,and columnar and keel-shaped micro-patterns on the cross section.The formation of hierarchical porous pattern is ascribed to the dynamic competition balance between the electrochemical oxidation rate and the oxide removal rate.It was found that increasing the ionic strength of the electrolyte can obviously disturb the surface morphology of the porous SiC during the photo-electrochemical etching.Possible mechanisms for selective etching were further discussed.
引用
收藏
页码:655 / 661
页数:7
相关论文
共 50 条
  • [21] EPR studies of interface defects in n-type 6H-SiC/SiO2 using porous SiC
    von Bardeleben, HJ
    Cantin, JL
    Mynbaeva, M
    Saddow, SE
    SILICON CARBIDE AND RELATED MATERIALS - 2002, 2002, 433-4 : 495 - 498
  • [22] Comparative columnar porous etching studies on n-type 6H SiC crystalline faces
    Ke, Y.
    Devaty, R. P.
    Choyke, W. J.
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2008, 245 (07): : 1396 - 1403
  • [23] Electrically active defects in n-type 4H- and 6H-SiC
    Doyle, JP
    Aboelfotoh, MO
    Svensson, BG
    SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 565 - 568
  • [24] Photoelectrochemical characterization of 6H-SiC
    van de Lagemaat, J
    Vanmaekelbergh, D
    Kelly, JJ
    JOURNAL OF APPLIED PHYSICS, 1998, 83 (11) : 6089 - 6095
  • [25] Gallium implantation induced deep levels in n-type 6H-SIC
    Gong, M
    Fung, S
    Beling, CD
    Brauer, G
    Wirth, H
    Skorupa, W
    JOURNAL OF APPLIED PHYSICS, 1999, 85 (01) : 105 - 107
  • [26] COSI2 OHMIC CONTACTS TO N-TYPE 6H-SIC
    LUNDBERG, N
    OSTLING, M
    SOLID-STATE ELECTRONICS, 1995, 38 (12) : 2023 - 2028
  • [27] CHARACTERIZATION OF MONOLITHIC N-TYPE 6H-SIC PIEZORESISTIVE SENSING ELEMENTS
    SHOR, JS
    BEMIS, L
    KURTZ, AD
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (05) : 661 - 665
  • [28] Micro-Raman and photoluminescence study on n-type 6H-SiC
    Feng, ZC
    Chua, SJ
    Evans, GA
    Steeds, JW
    Williams, KPJ
    Pitt, GD
    SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 2001, 353-356 : 345 - 348
  • [29] MOS characteristics of NO-grown oxynitrides on n-type 6H-SiC
    Chakraborty, S
    Lai, PT
    Kwok, PCK
    MICROELECTRONICS RELIABILITY, 2002, 42 (03) : 455 - 458
  • [30] Ti and Ti/Sb ohmic contacts on n-type 6H-SiC
    Barda, Bohumil
    Machac, Petr
    Hubickova, Marie
    MICROELECTRONIC ENGINEERING, 2008, 85 (10) : 2022 - 2024