Exciton–phonon interaction in Al0.4Ga0.6N/Al0.53Ga0.47N multiple quantum wells

被引：1
|
作者：
刘雅丽 [1 ]
金鹏 [1 ]
刘贵鹏 [1 ]
王维颖 [2 ]
齐志强 [3 ]
陈长清 [3 ]
王占国 [1 ]
机构：
[1] Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low-dimensional Semiconductor Materials and Devices,Institute of Semiconductors, Chinese Academy of Sciences
[2] State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University
[3] Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology
来源：
Chinese Physics B | 2016年 / 08期
基金：
中国国家自然科学基金;
关键词：
exciton–phonon coupling; AlGaN quantum wells; deep-ultraviolet photoluminescence;
D O I：
暂无
中图分类号：
O471.1 [半导体量子理论];
学科分类号：
070205 ; 080501 ; 0809 ; 080903 ;
摘要：
The exciton-phonon interaction in Al0.4Ga0.6N/Al0.53Ga0.47N multiple quantum wells(MQWs) is studied by deepultraviolet time-integrated and time-resolved photoluminescence(PL).Up to four longitudinal-optical(LO) phonon replicas of exciton recombination are observed,indicating the strong coupling of excitons with LO phonons in the MQWs.Moreover,the exciton-phonon coupling strength in the MQWs is quantified by the Huang-Rhys factor,and it keeps almost constant in a temperature range from 10 K to 120 K.This result can be explained in terms of effects of fluctuations in the well thickness in the MQWs and the temperature on the exciton-phonon interaction.
引用
收藏
页码：397 / 400
页数：4
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